Calibrated Photodiodes

  • Si, Ge, and InGaAs Photodiodes Available
  • NIST Traceable
  • Photodiodes Shipped with Calibration Curves




Related Items

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Mounted and Unmounted Detectors
Unmounted Photodiodes (200 - 2600 nm)
Calibrated Photodiodes (350 - 1800 nm)
Mounted Photodiodes (200 - 1800 nm)
Thermopile Detectors (0.2 - 15 µm)
Photovoltaic Detectors (2.0 - 10.6 µm)
Pigtailed Photodiodes (320 - 1000 nm)

Thorlabs offers four photodiodes, with NIST traceable calibration, that ship from stock. These include one Indium Gallium Arsenide (InGaAs), two Silicon (Si), and one Germanium (Ge) photodiodes.

Calibration Features:

  • Responsivity Measured Every 10 nm Over the Spectral Range of the Photodiode
  • Measurement Uncertainty ±5%
  • NIST Traceable

Each photodiode comes with its own data table and graph of the responsivity vs wavelength.

The responsivity of a particular photodiode varies from lot to lot. Due to this, the photodiode you receive may have a slightly different response than what is represented in the graphs in the info icons below, but will include calibration data. To the right, a graph for the FDS1010 photodiode shows how significantly you can expect the response to vary. Data was collected from 104 photodiodes. Minimum, Average, and Maximum responsivity was calculated at each data point and has been plotted.

Please note that inhomogeneities at the edges of the active area of the detector can generate unwanted capacitance and resistance effects that distort the time-domain response of the photodiode output. Thorlabs therefore recommends that the incident light on the photodiode is well centered on the active area. This can be accomplished by placing a focusing lens or pinhole in front of the detector element.

These photodiodes are calibrated with zero bias. We do not recommend reverse voltage biasing these photodiodes; doing so will increase the responsivity and void the calibration. For more information on voltage biasing as well as the noise floor, please see the Lab Facts tab.

Photodiode Tutorial

Theory of Operation

A junction photodiode is an intrinsic device that behaves similarly to an ordinary signal diode, but it generates a photocurrent when light is absorbed in the depleted region of the junction semiconductor. A photodiode is a fast, highly linear device that exhibits high quantum efficiency and may be used in a variety of different applications.

It is necessary to be able to correctly determine the level of the output current to expect and the responsivity based upon the incident light. Depicted in Figure 1 is a junction photodiode model with basic discrete components to help visualize the main characteristics and gain a better understanding of the operation of Thorlabs' photodiodes.

Equation 1
Photodiode Circuit Diagram
Figure 1: Photodiode Model

Photodiode Terminology

The responsivity of a photodiode can be defined as a ratio of generated photocurrent (IPD) to the incident light power (P) at a given wavelength:

Equation 2

Modes of Operation (Photoconductive vs. Photovoltaic)
A photodiode can be operated in one of two modes: photoconductive (reverse bias) or photovoltaic (zero-bias). Mode selection depends upon the application's speed requirements and the amount of tolerable dark current (leakage current).

In photoconductive mode, an external reverse bias is applied, which is the basis for our DET series detectors. The current measured through the circuit indicates illumination of the device; the measured output current is linearly proportional to the input optical power. Applying a reverse bias increases the width of the depletion junction producing an increased responsivity with a decrease in junction capacitance and produces a very linear response. Operating under these conditions does tend to produce a larger dark current, but this can be limited based upon the photodiode material. (Note: Our DET detectors are reverse biased and cannot be operated under a forward bias.)

In photovoltaic mode the photodiode is zero biased. The flow of current out of the device is restricted and a voltage builds up. This mode of operation exploits the photovoltaic effect, which is the basis for solar cells. The amount of dark current is kept at a minimum when operating in photovoltaic mode.

Dark Current
Dark current is leakage current that flows when a bias voltage is applied to a photodiode. When operating in a photoconductive mode, there tends to be a higher dark current that varies directly with temperature. Dark current approximately doubles for every 10 °C increase in temperature, and shunt resistance tends to double for every 6 °C rise. Of course, applying a higher bias will decrease the junction capacitance but will increase the amount of dark current present.

The dark current present is also affected by the photodiode material and the size of the active area. Silicon devices generally produce low dark current compared to germanium devices which have high dark currents. The table below lists several photodiode materials and their relative dark currents, speeds, sensitivity, and costs.

Material Dark Current Speed Spectral Range Cost
Silicon (Si) Low High Speed Visible to NIR Low
Germanium (Ge) High Low Speed NIR Low
Gallium Phosphide (GaP) Low High Speed UV to Visible Moderate
Indium Gallium Arsenide (InGaAs) Low High Speed NIR Moderate
Indium Arsenide Antimonide (InAsSb) High Low Speed NIR to MIR High
Extended Range Indium Gallium Arsenide (InGaAs) High High Speed NIR High
Mercury Cadmium Telluride (MCT, HgCdTe) High Low Speed NIR to MIR High

Junction Capacitance
Junction capacitance (Cj) is an important property of a photodiode as this can have a profound impact on the photodiode's bandwidth and response. It should be noted that larger diode areas encompass a greater junction volume with increased charge capacity. In a reverse bias application, the depletion width of the junction is increased, thus effectively reducing the junction capacitance and increasing the response speed.

Bandwidth and Response
A load resistor will react with the photodetector junction capacitance to limit the bandwidth. For best frequency response, a 50 Ω terminator should be used in conjunction with a 50 Ω coaxial cable. The bandwidth (fBW) and the rise time response (tr) can be approximated using the junction capacitance (Cj) and the load resistance (RLOAD):

Equation 3

Noise Equivalent Power
The noise equivalent power (NEP) is the generated RMS signal voltage generated when the signal to noise ratio is equal to one. This is useful, as the NEP determines the ability of the detector to detect low level light. In general, the NEP increases with the active area of the detector and is given by the following equation:

Photoconductor NEP

Here, S/N is the Signal to Noise Ratio, Δf is the Noise Bandwidth, and Incident Energy has units of W/cm2. For more information on NEP, please see Thorlabs' Noise Equivalent Power White Paper.

Terminating Resistance
A load resistance is used to convert the generated photocurrent into a voltage (VOUT) for viewing on an oscilloscope:

Equation 4

Depending on the type of the photodiode, load resistance can affect the response speed. For maximum bandwidth, we recommend using a 50 Ω coaxial cable with a 50 Ω terminating resistor at the opposite end of the cable. This will minimize ringing by matching the cable with its characteristic impedance. If bandwidth is not important, you may increase the amount of voltage for a given light level by increasing RLOAD. In an unmatched termination, the length of the coaxial cable can have a profound impact on the response, so it is recommended to keep the cable as short as possible.

Shunt Resistance
Shunt resistance represents the resistance of the zero-biased photodiode junction. An ideal photodiode will have an infinite shunt resistance, but actual values may range from the order of ten Ω to thousands of MΩ and is dependent on the photodiode material. For example, and InGaAs detector has a shunt resistance on the order of 10 MΩ while a Ge detector is in the kΩ range. This can significantly impact the noise current on the photodiode. For most applications, however, the high resistance produces little effect and can be ignored.

Series Resistance
Series resistance is the resistance of the semiconductor material, and this low resistance can generally be ignored. The series resistance arises from the contacts and the wire bonds of the photodiode and is used to mainly determine the linearity of the photodiode under zero bias conditions.

Common Operating Circuits

Reverse Biased DET Circuit
Figure 2: Reverse-Biased Circuit (DET Series Detectors)

The DET series detectors are modeled with the circuit depicted above. The detector is reverse biased to produce a linear response to the applied input light. The amount of photocurrent generated is based upon the incident light and wavelength and can be viewed on an oscilloscope by attaching a load resistance on the output. The function of the RC filter is to filter any high-frequency noise from the input supply that may contribute to a noisy output.

Reverse Biased DET Circuit
Figure 3: Amplified Detector Circuit

One can also use a photodetector with an amplifier for the purpose of achieving high gain. The user can choose whether to operate in Photovoltaic of Photoconductive modes. There are a few benefits of choosing this active circuit:

  • Photovoltaic mode: The circuit is held at zero volts across the photodiode, since point A is held at the same potential as point B by the operational amplifier. This eliminates the possibility of dark current.
  • Photoconductive mode: The photodiode is reversed biased, thus improving the bandwidth while lowering the junction capacitance. The gain of the detector is dependent on the feedback element (Rf). The bandwidth of the detector can be calculated using the following:

Equation 5

where GBP is the amplifier gain bandwidth product and CD is the sum of the junction capacitance and amplifier capacitance.

Effects of Chopping Frequency

The photoconductor signal will remain constant up to the time constant response limit. Many detectors, including PbS, PbSe, HgCdTe (MCT), and InAsSb, have a typical 1/f noise spectrum (i.e., the noise decreases as chopping frequency increases), which has a profound impact on the time constant at lower frequencies.

The detector will exhibit lower responsivity at lower chopping frequencies. Frequency response and detectivity are maximized for

Photoconductor Chopper Equation

This tab contains a collection of experiments performed at Thorlabs regarding the performance of photodiodes we offer. Each section is its own independent experiment, which can be viewed by clicking in the appropriate box below. Photodiode Saturation Limit and Noise Floor explores how different conditions, including temperature, resistivity, reverse-bias voltage, responsivity, and system bandwidth, can affect noise in a photodiode's output. Photodiode Spatial Uniformity explores variations in the responsivity as a small-diameter light beam is scanned across the active area of the photodiode. Photodiodes with different material compositions are tested, and eight units of one silicon-based model are tested to investigate unit-to-unit variations. Dark Current as a Function of Temperature and Noise Equivalent Power (NEP) as a Function of Temperature describe how dark current and NEP, respectively, vary with temperature and how measurements are affected. Beam Size and Photodiode Saturation shows how the photodiode saturation point changes with the incident beam size and investigates several models to explain the results. Bias Voltage examines the effects of incident power on the effective reverse bias voltage of a photodiode circuit and verifies a reliable model for predicting those changes.

Photodiode Saturation Limit and Noise Floor

About Our Lab Facts
Our application engineers live the experience of our customers by conducting experiments in Alex’s personal lab. Here, they gain a greater understanding of our products’ performance across a range of application spaces. Their results can be found throughout our website on associated product pages in Lab Facts tabs. Experiments are used to compare performance with theory and explore the benefits and drawbacks of using similar products in unique setups, in an attempt to understand the intricacies and practical limitations of our products. In all cases, the theory, procedure, and results are provided to assist with your buying decisions.

Pulsed Laser Emission: Power and Energy Calculations

Determining whether emission from a pulsed laser is compatible with a device or application can require referencing parameters that are not supplied by the laser's manufacturer. When this is the case, the necessary parameters can typically be calculated from the available information. Calculating peak pulse power, average power, pulse energy, and related parameters can be necessary to achieve desired outcomes including:

  • Protecting biological samples from harm.
  • Measuring the pulsed laser emission without damaging photodetectors and other sensors.
  • Exciting fluorescence and non-linear effects in materials.

Pulsed laser radiation parameters are illustrated in Figure 1 and described in the table. For quick reference, a list of equations are provided below. The document available for download provides this information, as well as an introduction to pulsed laser emission, an overview of relationships among the different parameters, and guidance for applying the calculations. 



Period and repetition rate are reciprocal:    and 
Pulse energy calculated from average power:       
Average power calculated from pulse energy:        
Peak pulse power estimated from pulse energy:            

Peak power and average power calculated from each other:
Peak power calculated from average power and duty cycle*:
*Duty cycle () is the fraction of time during which there is laser pulse emission.
Pulsed Laser Emission Parameters
Click to Enlarge

Figure 1: Parameters used to describe pulsed laser emission are indicated in the plot (above) and described in the table (below). Pulse energy (E) is the shaded area under the pulse curve. Pulse energy is, equivalently, the area of the diagonally hashed region. 

Parameter Symbol Units Description
Pulse Energy E Joules [J] A measure of one pulse's total emission, which is the only light emitted by the laser over the entire period. The pulse energy equals the shaded area, which is equivalent to the area covered by diagonal hash marks.
Period Δt  Seconds [s]  The amount of time between the start of one pulse and the start of the next.
Average Power Pavg Watts [W] The height on the optical power axis, if the energy emitted by the pulse were uniformly spread over the entire period.
Instantaneous Power P Watts [W] The optical power at a single, specific point in time.
Peak Power Ppeak Watts [W] The maximum instantaneous optical power output by the laser.
Pulse Width Seconds [s] A measure of the time between the beginning and end of the pulse, typically based on the full width half maximum (FWHM) of the pulse shape. Also called pulse duration.
Repetition Rate frep Hertz [Hz] The frequency with which pulses are emitted. Equal to the reciprocal of the period.

Example Calculation:

Is it safe to use a detector with a specified maximum peak optical input power of 75 mW to measure the following pulsed laser emission?

  • Average Power: 1 mW
  • Repetition Rate: 85 MHz
  • Pulse Width: 10 fs

The energy per pulse:

seems low, but the peak pulse power is:

It is not safe to use the detector to measure this pulsed laser emission, since the peak power of the pulses is >5 orders of magnitude higher than the detector's maximum peak optical input power.

Posted Comments:
Hoang Luong  (posted 2023-08-27 10:47:09.197)
Could you please provide calibration file for S/N: 230217205? I could not download it here.
hchow  (posted 2023-08-29 09:12:10.0)
Dear Mr. Luong, thank you for your feedback. I will personally reach out to you to provide the relevant information. Thank you.
Angelo Pidatella  (posted 2023-06-07 10:03:26.847)
Hello, I would be interested in purchasing your calibrated photodiode. However, I would like to know whether it is possible to get a "mounted" version of the same, or alternatively supporting me in buying the ancillary instruments/device to mount it by myself, guaranteeing the calibration traceability of the photodiode. Waiting for your response, I would like to thank you a lot in advance.
fmortaheb  (posted 2023-06-08 08:58:14.0)
Thank you very much for contacting us. I'll reach out to you directly to discuss your application.
user  (posted 2023-04-18 16:32:29.62)
Can I get the QE data below 800nm of FDG03-CAL?
hchow  (posted 2023-04-19 08:17:02.0)
Dear User, thank you for your feedback, I will personally reach out to you to provide the relevant information. Thank you.
user  (posted 2023-03-22 10:51:50.513)
Hello, I would like to accurately measure very low light power (~200pW/cm^2). The conditions would be controlled and at a temperature of 21degC. Would you be able to recommend a photodiode and circuit that could measure such low light power reliably? Regards, Ronan
dpossin  (posted 2023-03-24 06:21:28.0)
Dear Ronan, Thank you for your feedback. Since the NEP for the suggested diode is rated as 2.6 pw/sqrt(Hz), it is theoretical possible to measure such low powers. However the measurement accuracy is also dependent on the accuracy one is abole to measure the photocurrent accurately. I am reaching out to you in order to discuss this in more detail.
Emanuele Malvisi  (posted 2023-02-09 13:14:06.243)
Last year, we buyed the calibrated photodiodes FDS1010-CAL and FDG10X10-CAL. I use these detectors to determining light power (max 40 uW) from halogen light lamp source, with a monochromator, in the spectral range 350-1800 nm. In the overlap range 800-1100 nm of two detectors (used for determine a single curve), I observe the light power calculated with Ge photodiode is lower of light power calculated with Si photodiode than about 3.5-4%, this lower of your declared measurement uncertainty of ±5%. The shapes of two power curves are the same, but they differ by a "k" constant coefficient. The monochromtic beam dimensions are lower of cells size. On active front side of cells, are there fingers? Can you suggest me the main cause of this difference? Thank you in advance for your support.
hchow  (posted 2023-02-13 09:23:49.0)
Dear Mr. Malvisi, thank you for your feedback. I believe the difference you are seeing in your power readings is due to the difference in responsivities of the two types of photodiodes. The FDS1010 Si photodiode responsivity peaks at around 1000 nm, whereas the FDG10X10 Ge photodiode responsivity peaks at 1550 nm. Given that Halogen light peaks at roughly 900 nn, you will definitely notice a difference in the amount of photocurrent generated by the two different photodiodes. In any case, I will personally reach out to you to provide you with more information. Thank you very much.
Andrey Kuznetsov  (posted 2021-08-21 14:47:54.803)
I sent an email to techsupport about getting my digital calibration certificate with all the values but have not received a response in a week! Please fix your certificate download tool, it says mine is not found. Also, please adjust your template to show more than 2 significant digits for the responsively values on the printout certificate to maybe 3 or 4.
MKiess  (posted 2021-08-24 09:41:55.0)
Dear Andrey, thank you very much for your feedback. Apologies that the download of the certificate did not work. I have sent you the appropriate certificates directly. Showing more than two siginificant digits for responivity in the certificate is a good suggestion. We will discuss this internally and see if a change is possible. Thank you very much for this helpful feedback.
user  (posted 2020-11-12 09:43:39.4)
Hello. I cannot download any of my FDS100-CAL (SN: 201027208), FGA21-CAL (SN: 200928220), FDG03-CAL (SN: 201021220) data. Please, send me data of calibration.
soswald  (posted 2020-11-13 03:30:54.0)
This is a response from Sönke at Thorlabs: Thank you for your feedback. I have reached out to you directly to send you the calibration certiifcates as well as the raw data in electronic format.
Adam Halverson  (posted 2020-01-07 14:48:47.36)
What does NIST traceable mean? How accurate is the calibration?
MKiess  (posted 2020-01-08 06:40:35.0)
This is a response from Michael at Thorlabs. Thank you very much for your inquiry. NIST traceable means that the equipment we use for calibration has an unbroken chain of measurements that is traceable to national and international standards. In the case of NIST, this is the National Instituite of Standards and Technology, or NIST for short. For our calibrated sensors, all measurement uncertainties can be found on our website and are supplied in a separate calibration certificate. For our Calibrated Photodiodes, the measurement uncertainty is ±5% and we measure every 10nm over the spectral range of the photodiode. Further and more detailed information of our calibration process and traceability can be found in our Power Meter and Sensor Tutorial at the following link:
user  (posted 2019-08-15 15:21:33.38)
My product has just arrived. The serial number is: 190716305. The security code I continuously type in correctly. Currently, it says: md4xci. However, I cannot download any of my FDS1010-CAL data. Please assist. Thank You! A.J. Matthews Toledo Solar
MKiess  (posted 2019-08-20 04:15:40.0)
This is a response from Michael at Thorlabs. Thank you very much for your feedback! I have contacted you directly to send you the data.
user  (posted 2019-05-12 00:54:46.333)
N0 cal. data - 190122212 - 190122210
lmorgus  (posted 2019-05-13 09:07:57.0)
A response from Laurie at Thorlabs: Thank you for noting that there is an issue with the ability to download serialized information. I will reach out to you directly with the requested files while we work to ensure these are available for download from our website.
user  (posted 2019-05-12 00:47:50.46)
I couldnot download the calibration data of sn 190205318 (FDS100-cal)
lmorgus  (posted 2019-05-13 09:01:35.0)
A response from Laurie at Thorlabs: Thank you for noting that there is an issue with the ability to download serialized information. I will reach out to you directly with the requested files while we work to ensure these are available for download from our website.
claudios  (posted 2019-01-14 16:36:57.417)
Hello, can you give me a quote for a calibrated and mounted FDS100 Si photodiode, type SM05PD1A? Is the calibration done focusing the light only at the center of the device or illuminating the whole active area? In the former case, does a uniform complete illumination of the device affect the responsivity obtained with the calibration?
wskopalik  (posted 2019-01-16 07:22:32.0)
This is a response from Wolfgang at Thorlabs. Thank you very much for your feedback! Yes, we can offer a calibrated version of the SM05PD1A as well. In the calibration setup a beam with about 2mm in diameter is used. So a large part of the active area of the SM05PD1A is illuminated. In general, the responsivity of photodiodes is also quite uniform over the photodiode surface. You can find more information about the spatial uniformity of photodiodes in the “Lab Facts” section of our website ( I will contact you directly to provide further information and also a quote.
s.krause  (posted 2017-07-31 09:45:28.43)
We bought a FDS1010-CAL to measure light intensities without applying bias voltage, just connecting the diode to an Pico-Amperemeter. I wonder how linear the response is to incident light level? Do you have any numbers, until which current output it is linear (within 1%)? Best, Sascha
tfrisch  (posted 2017-07-31 03:36:54.0)
Hello, thank you for contacting Thorlabs. We have some information on the theory of saturation in the below lab facts. It will depend on a number of factors including the bias voltage, built-in voltage, responsivity, load resistance and series resistance, but likely the detector would be completely saturated at a few mW with no bias voltage, and non-linear performance would begin before that. For the built in voltage of a silicon diode, 0.6V is a fair estimate, but you can get a more accurate measurement by finding the output voltage at saturation with a large load resistor.
hakan.pettersson  (posted 2017-03-21 19:34:14.967)
I wonder at which bias the provided responsivity data for the FDS100-CAL is recorded at. Also, can the responsivity simply be scaled with bias according to a simply relation? All the best HåkanP
swick  (posted 2017-03-22 06:15:53.0)
This is a response from Sebastian at Thorlabs. Thank you for the inquiry. The calibration is performed without bias voltage. Unfortunately, there is no simple relation between responsivity and bias. The calibration data is only valid without bias.
Jeff.Wheeldon  (posted 2016-06-08 16:01:31.357)
Could you tell me the highest measurable power using FDG05-CAL. We regularly measure total powers of 45 mW is this within the specification for this product?
besembeson  (posted 2016-06-09 09:18:53.0)
Response from Bweh at Thorlabs USA: That may be too high. At peak responsivity (1550nm) for example with 45mW, you will be around 38mA of output generated current, and you will be saturating the detector. Depending on your wavelength, you want to keep optical power level such that output current is under 1mA to stay in the linear regime for the detector.
dojin78  (posted 2014-03-18 10:49:01.103)
Could you tell me the difference FGA21-CAL and FGA21?
alexandru.serb05  (posted 2013-09-03 11:01:18.603)
Do we know what the optical damage threshold for this product is (and for that matter for all of them)? In other words beyond what sort of irradiance will I start frying the device? I suspect this will be wavelength dependent so ideally there will be some sort of plot showing damage threshold in W/M^2 vs wavelength, but if not, some rough figure would also be very helpful. Thanks
jlow  (posted 2013-09-04 09:36:00.0)
Response from Jeremy at Thorlabs: The photodiode will start to saturate well before damage would occur. In general, I would recommend keeping the current output from the photodiode to be <1mA to avoid saturating the photodiode. I will get in contact with you to discuss about your application further.
bdada  (posted 2011-11-17 15:29:00.0)
Response from Buki at Thorlabs: Thank you for your feedback. We can provide the calibrated version of the SM05PD1A. We will contact you regarding a quote.
gert  (posted 2011-11-17 15:09:23.0)
Can you give us a price for a calibrated and mounted FDS100 Si photodiode, type SM05PD1A ? Thank you, Gert Raskin
jjurado  (posted 2011-02-24 14:33:00.0)
Response from Javier at Thorlabs to rjaculbia: Thank you for contacting us with your request. We currently do not offer mounts or adapters for easily mounting the calibrated photodiodes. However, we can offer these already mounted in SM05 and SM1 compatible tubes with SMA or BNC output connectors as special items. Please visit the link below: I will contact you directly to get information about your selection.
rbjaculbia  (posted 2011-02-24 01:04:07.0)
hi, how do we mount these diodes in a setup? can this be mounted using the s1lm9? Thanks
apalmentieri  (posted 2010-01-20 15:33:04.0)
A response from Adam at Thorlabs: The calibration data is in the form of an excel data table with a wavelength resolution of 10nm. When calibrating these diodes, we do not use fiber coupling methods. We use a monochromator with an output beam diameter of 1.7mm so not to overfill the aperture. The accuracy of +/-5% is a tolerance that includes any measurement errors, for instance shot noise and johnson noise from the detector, that must be taken into account while calibrating the diode to NIST traceable standards.
markus.blaser  (posted 2010-01-20 11:05:25.0)
Few questions with respect to FGA21-CAL: In which form is the calibration data availabe: Data Table ? Wavelength resolution ? What is the optical coupling method used for the calibration procedure: Butt Fiber / Angled Fiber or other coupling technique ? Why is the accuracy only +/- 5%, when the detector is calibrated against a NIST traceable reference detector ?

The following table lists Thorlabs' selection of photodiodes, photoconductive, and pyroelectric detectors. Item numbers in the same row contain the same detector element.

Photodetector Cross Reference
Wavelength Material Unmounted
Amplified Detector,
OEM Package
200 - 1100 nm Si FDS010 SM05PD2A
DET10A2 PDA10A2 -
Si - SM1PD2A - - -
240 - 1170 nm B-Si - - DET20X2 - -
320 - 1000 nm Si - - - PDA8A2 -
320 - 1100 nm Si FD11A SM05PD3A - PDF10A2 -
Si - a - DET100A2 a PDA100A2 a PDAPC2 a
340 - 1100 nm Si FDS10X10 - - - -
350 - 1100 nm Si FDS100
FDS100-CAL b
Si FDS1010
FDS1010-CAL b
- - -
400 - 1000 nm Si - - - PDA015A2
400 - 1100 nm Si FDS015 c - - - -
Si FDS025 c
FDS02 d
- DET02AFC(/M)
- -
400 - 1700 nm Si & InGaAs DSD2 - - - -
500 - 1700 nm InGaAs - - DET10N2 - -
0.6 - 16 µm LiTaO3 - - - PDA13L2e -
750 - 1650 nm InGaAs - - - PDA8GS -
800 - 1700 nm InGaAs FGA015 - - PDA015C2 -
InGaAs FGA21
InGaAs FGA01 c
- DET01CFC(/M) - -
InGaAs FDGA05 c - - PDA05CF2 -
InGaAs - - DET08CFC(/M)
- -
InGaAs - - - PDF10C2 -
800 - 1800 nm Ge FDG03
SM05PD6A DET30B2 PDA30B2 -
Ge FDG50 - DET50B2 PDA50B2 -
Ge FDG05 - - - -
900 - 1700 nm InGaAs FGA10 SM05PD4A DET10C2 PDA10CS2 -
900 - 2600 nm InGaAs FD05D - DET05D2 - -
FD10D - DET10D2 PDA10D2 -
950 - 1650 nm InGaAs - - - FPD310-FC-NIR
1.0 - 5.8 µm InAsSb - - - PDA10PT(-EC) -
2.0 - 8.0 µm HgCdTe (MCT) VML8T0
VML8T4 f
- - PDAVJ8 -
2.0 - 10.6 µm HgCdTe (MCT) VML10T0
VML10T4 f
- - PDAVJ10 -
2.7 - 5.0 µm HgCdTe (MCT) VL5T0 - - PDAVJ5 -
2.7 - 5.3 µm InAsSb - - - PDA07P2 -
  • If you are interested in purchasing the bare photodiode incorporated in these detectors without the printed circuit board, please contact Tech Support.
  • Calibrated Unmounted Photodiode
  • Unmounted TO-46 Can Photodiode
  • Unmounted TO-46 Can Photodiode with FC/PC Bulkhead
  • Pyroelectric Detector
  • Photovoltaic Detector with Thermoelectric Cooler
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Si Photodiodes with NIST Traceable Calibration

Two NIST traceable calibrated Si photodiodes are available from stock. Si photodiodes are sensitive across the visible and into the near infrared spectrum. The FDS100-CAL and FDS1010-CAL are both large area Si photodiodes and are packaged in a can and on a square ceramic substrate respectively. For detailed information about their specifications and to view responsivity, dark current, and capacitance graphs, please click on the info icons in the table below.

Thorlabs offers response-flattening filters that are designed to improve the response uniformity of these silicon photodiodes. Click here for more information.

Item # Info Wavelength Active
Capacitance Package Vbias,max Compatible
FDS100-CAL info 350 - 1100 nm 13 mm2 10 ns
@ 632 nm, 20 V
@ 900 nm, 20 V
1.0 nA
@ 20 V
24 pF
@ 20 V (Typ.)
TO-5 Can
25 V STO5S
FDS1010-CAL info 350 - 1100 nm 100 mm2 65 ns
@ 632 nm, 5 V
@ 970 nm, 5 V
600 nA
@ 5 V
375 pF
@ 5 V (Typ.)
0.45" x 0.52"
25 V Not Available
  • Typical Values; RL = 50 Ω. The photodiode will be slower at NIR wavelengths.
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
FDS100-CAL Support Documentation
FDS100-CALCalibrated Si Photodiode, 350 - 1100 nm, 3.6 x 3.6 mm Active Area
FDS1010-CAL Support Documentation
FDS1010-CALCalibrated Si Photodiode, 350 - 1100 nm, 10 x 10 mm Active Area
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Ge Photodiode with NIST Traceable Calibration

One NIST traceable calibrated Ge photodiode is available from stock. Ge photodiodes are sensitive in the near infrared spectrum from 800 - 1800 nm. The FDG03-CAL is AR Coated for 1300 to 1550 nm and is packaged in a can. For detailed information about its specifications and to view responsivity, dark current, and capacitance graphs, please click on the info icon in the table below.

Item # Info Wavelength Active
Capacitance Package Vbias,max Compatible
FDG03-CAL info 800 - 1800 nm 7.1 mm2 600 ns
@ 3 V
@ 1500 nm, 1 V
4.0 µA
@ 1 V
6 nF @ 1 V (Typ.)
4.5 nF @ 3 V (Typ.)
TO-5 Can
  • Typical Values; RL = 50 Ω.
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
FDG03-CAL Support Documentation
FDG03-CALCalibrated Ge Photodiode, 800 - 1800 nm, Ø3.0 mm Active Area
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InGaAs Photodiode with NIST Traceable Calibration

One NIST traceable calibrated InGaAs photodiode is available from stock. InGaAs photodiodes are sensitive in the near infrared spectrum from 800 to 1700 nm. The FGA21-CAL has a PIN structure that results in fast zero bias Rise / Fall times. For detailed information about its specifications and to view responsivity, dark current, and capacitance graphs, please click on the info icon in the table below.

Item # Info Wavelength Active Area Rise/Fall
Dark Current Capacitance Package Vbias,max Compatible
FGA21-CAL info 800 - 1700 nm 3.1 mm2 14 ns
@ 3 V
@ 1550 nm
50 nA @ 1 V
100 pF @ 3 V
TO-5 Can
  • Typical Values; RL = 50 Ω.
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
FGA21-CAL Support Documentation
FGA21-CALCalibrated InGaAs Photodiode, 800 - 1700 nm, Ø2.0 mm Active Area