Create an Account  |   Log In

View All »Matching Part Numbers


Your Shopping Cart is Empty
         

Transimpedance Amplifiers for Photodiodes


  • Convert Current Output of Photodiodes to Voltage
  • Available with Transimpedance up to 10 MV/A or Bandwidth up to 100 kHz
  • Input Current Noise as Low as 0.08 pA/Hz1/2

AMP110

Gain: 10 MV/A
Bandwidth: DC - 1 kHz

AMP120

Gain: 100 kV/A
Bandwidth: DC - 100 kHz

Related Items


Please Wait

Click for Details

The voltage offset adjuster and polarity switch are located on the output BNC connector end.

Applications

  • Fluorescence Measurements or Other Low Light Sources
  • Pre-Amplifiers for Oscilloscopes, Lock-In Amplifiers, or A/D Converters

Features

  • Convert Current Output of Photodiodes to Voltage
  • Amplifiers Optimized for High Speed or High Gain
  • Compact In-Line BNC Design
  • DS5 USB Power Supply and 1.5 m Long Micro-B USB Cable Included

Thorlabs' AMP Series of Transimpedance Amplifiers are designed to amplify the output signal from unmounted or mounted photodiodes. Refer to the table below or the Specs tab for amplifier specifications. The offset caused by the dark current of a connected photodiode can be compensated for using the Zero Adjust screw on the output end of the amplifier (see image to the right). A switch allows the output signal's sign to be set based on the connected photodiode's polarity (AG or CG).

Each transimpedance amplifier has an in-line box design with two female BNC connectors, and is intended to be used between two BNC cables. SMA-mounted photodiodes can be connected directly using a CA2824 cable. The devices are powered through a Micro-B USB port using the included 5 V, 2 A power supply or any other available USB port. The internal electronics of the amplifier regulate the power to the amplification circuitry, isolating the device's performance from electrical noise that may be inherent to the power source.

Specifications
Item # AMP130 AMP120 AMP110
Transimpedance Gain (DC, Typ.) 1 kV/A 100 kV/A 10 MV/A
Bandwidth (3 dB, Cin ≤ 10 nF)a DC to 100 kHz DC to 1 kHz
Rise/Fall Time (10% to 90%) <3 µs <300 µs
Input Current Limitsb ±2 mA ±20 µA ±200 nA
Input Impedancec 100 Ω
Input Current Noise (NEP)a,d 18.0 pA/Hz1/2 0.36 pA/Hz1/2 0.08 pA/Hz1/2
Quiescent Current 45 mA
Output Voltage
Range
50 Ω Load ±1.0 V
Hi-Z Load ±2.0 V
Output Impedance 50 Ω
Included Power Supply DS5
Power Supply Voltage 5 V
Power Supply Current 2 A
Included USB Cable Micro-B, 1.5 m Long
Dimensions (L x W x H) 96.7 mm x 31.8 mm x 25.4 mm
(3.81" x 1.25" x 1.00")
Mass (Weight) 80 g (2.8 oz)
  • Bandwidth and input current noise are typical values that depend on the source capacitance. Keep the source capacitance as low as possible by using short cables at the input to achieve the best possible bandwidth and noise performance.
  • Exceeding these limits saturates the amplifier. There is a chance of damaging the amplifier if operating outside of this specification.
  • Virtual Ground
  • Specified Over 3 dB Bandwidth

The graphs below represent calculated data using an input source with capacitance up to 10 nF.

AMP120 Spectral Response
Click to Enlarge

Click Here for Raw Data
AMP110 Spectral Response
Click to Enlarge

Click Here for Raw Data

Input Current Connector

BNC FemaleBNC Female

Output Voltage Connector

BNC FemaleBNC Female

50 Ω Recommended Termination

Power Supply Connector

Micro-B USBMicro-B USB

Photodiode Tutorial

Theory of Operation

A junction photodiode is an intrinsic device that behaves similarly to an ordinary signal diode, but it generates a photocurrent when light is absorbed in the depleted region of the junction semiconductor. A photodiode is a fast, highly linear device that exhibits high quantum efficiency based upon the application and may be used in a variety of different applications.

It is necessary to be able to correctly determine the level of the output current to expect and the responsivity based upon the incident light. Depicted in Figure 1 is a junction photodiode model with basic discrete components to help visualize the main characteristics and gain a better understanding of the operation of Thorlabs' photodiodes.

Equation 1
Photodiode Circuit Diagram
Figure 1: Photodiode Model

Photodiode Terminology

Responsivity
The responsivity of a photodiode can be defined as a ratio of generated photocurrent (IPD) to the incident light power (P) at a given wavelength:

Equation 2

Modes of Operation (Photoconductive vs. Photovoltaic)
A photodiode can be operated in one of two modes: photoconductive (reverse bias) or photovoltaic (zero-bias). Mode selection depends upon the application's speed requirements and the amount of tolerable dark current (leakage current).

Photoconductive
In photoconductive mode, an external reverse bias is applied, which is the basis for our DET series detectors. The current measured through the circuit indicates illumination of the device; the measured output current is linearly proportional to the input optical power. Applying a reverse bias increases the width of the depletion junction producing an increased responsivity with a decrease in junction capacitance and produces a very linear response. Operating under these conditions does tend to produce a larger dark current, but this can be limited based upon the photodiode material. (Note: Our DET detectors are reverse biased and cannot be operated under a forward bias.)

Photovoltaic
In photovoltaic mode the photodiode is zero biased. The flow of current out of the device is restricted and a voltage builds up. This mode of operation exploits the photovoltaic effect, which is the basis for solar cells. The amount of dark current is kept at a minimum when operating in photovoltaic mode.

Dark Current
Dark current is leakage current that flows when a bias voltage is applied to a photodiode. When operating in a photoconductive mode, there tends to be a higher dark current that varies directly with temperature. Dark current approximately doubles for every 10 °C increase in temperature, and shunt resistance tends to double for every 6 °C rise. Of course, applying a higher bias will decrease the junction capacitance but will increase the amount of dark current present.

The dark current present is also affected by the photodiode material and the size of the active area. Silicon devices generally produce low dark current compared to germanium devices which have high dark currents. The table below lists several photodiode materials and their relative dark currents, speeds, sensitivity, and costs.

Material Dark Current Speed Spectral Range Cost
Silicon (Si) Low High Speed Visible to NIR Low
Germanium (Ge) High Low Speed NIR Low
Gallium Phosphide (GaP) Low High Speed UV to Visible Moderate
Indium Gallium Arsenide (InGaAs) Low High Speed NIR Moderate
Indium Arsenide Antimonide (InAsSb) High Low Speed NIR to MIR High
Extended Range Indium Gallium Arsenide (InGaAs) High High Speed NIR High
Mercury Cadmium Telluride (MCT, HgCdTe) High Low Speed NIR to MIR High

Junction Capacitance
Junction capacitance (Cj) is an important property of a photodiode as this can have a profound impact on the photodiode's bandwidth and response. It should be noted that larger diode areas encompass a greater junction volume with increased charge capacity. In a reverse bias application, the depletion width of the junction is increased, thus effectively reducing the junction capacitance and increasing the response speed.

Bandwidth and Response
A load resistor will react with the photodetector junction capacitance to limit the bandwidth. For best frequency response, a 50 Ω terminator should be used in conjunction with a 50 Ω coaxial cable. The bandwidth (fBW) and the rise time response (tr) can be approximated using the junction capacitance (Cj) and the load resistance (RLOAD):

Equation 3

Noise Equivalent Power
The noise equivalent power (NEP) is the generated RMS signal voltage generated when the signal to noise ratio is equal to one. This is useful, as the NEP determines the ability of the detector to detect low level light. In general, the NEP increases with the active area of the detector and is given by the following equation:

Photoconductor NEP

Here, S/N is the Signal to Noise Ratio, Δf is the Noise Bandwidth, and Incident Energy has units of W/cm2. For more information on NEP, please see Thorlabs' Noise Equivalent Power White Paper.

Terminating Resistance
A load resistance is used to convert the generated photocurrent into a voltage (VOUT) for viewing on an oscilloscope:

Equation 4

Depending on the type of the photodiode, load resistance can affect the response speed. For maximum bandwidth, we recommend using a 50 Ω coaxial cable with a 50 Ω terminating resistor at the opposite end of the cable. This will minimize ringing by matching the cable with its characteristic impedance. If bandwidth is not important, you may increase the amount of voltage for a given light level by increasing RLOAD. In an unmatched termination, the length of the coaxial cable can have a profound impact on the response, so it is recommended to keep the cable as short as possible.

Shunt Resistance
Shunt resistance represents the resistance of the zero-biased photodiode junction. An ideal photodiode will have an infinite shunt resistance, but actual values may range from the order of ten Ω to thousands of MΩ and is dependent on the photodiode material. For example, and InGaAs detector has a shunt resistance on the order of 10 MΩ while a Ge detector is in the kΩ range. This can significantly impact the noise current on the photodiode. For most applications, however, the high resistance produces little effect and can be ignored.

Series Resistance
Series resistance is the resistance of the semiconductor material, and this low resistance can generally be ignored. The series resistance arises from the contacts and the wire bonds of the photodiode and is used to mainly determine the linearity of the photodiode under zero bias conditions.

Common Operating Circuits

Reverse Biased DET Circuit
Figure 2: Reverse-Biased Circuit (DET Series Detectors)

The DET series detectors are modeled with the circuit depicted above. The detector is reverse biased to produce a linear response to the applied input light. The amount of photocurrent generated is based upon the incident light and wavelength and can be viewed on an oscilloscope by attaching a load resistance on the output. The function of the RC filter is to filter any high-frequency noise from the input supply that may contribute to a noisy output.

Reverse Biased DET Circuit
Figure 3: Amplified Detector Circuit

One can also use a photodetector with an amplifier for the purpose of achieving high gain. The user can choose whether to operate in Photovoltaic of Photoconductive modes. There are a few benefits of choosing this active circuit:

  • Photovoltaic mode: The circuit is held at zero volts across the photodiode, since point A is held at the same potential as point B by the operational amplifier. This eliminates the possibility of dark current.
  • Photoconductive mode: The photodiode is reversed biased, thus improving the bandwidth while lowering the junction capacitance. The gain of the detector is dependent on the feedback element (Rf). The bandwidth of the detector can be calculated using the following:

Equation 5

where GBP is the amplifier gain bandwidth product and CD is the sum of the junction capacitance and amplifier capacitance.

Effects of Chopping Frequency

The photoconductor signal will remain constant up to the time constant response limit. Many detectors, including PbS, PbSe, HgCdTe (MCT), and InAsSb, have a typical 1/f noise spectrum (i.e., the noise decreases as chopping frequency increases), which has a profound impact on the time constant at lower frequencies.

The detector will exhibit lower responsivity at lower chopping frequencies. Frequency response and detectivity are maximized for

Photoconductor Chopper Equation


Posted Comments:
drivers  (posted 2019-02-15 13:19:12.61)
In the AMP120 spec sheet there is a transimpedance amplifier shown in the electrical schematic. I assume the feedback resistance for the TIA in this diagram is 100kV? Additionally, how much RMS drift would you expect for the offset at a stable temperature? I ask because offset adjusts are often susceptible to drift.
nreusch  (posted 2019-02-25 02:11:14.0)
This is a response from Nicola at Thorlabs. Thank you for your inquiry. Yes, the resistance is 100 kOhm. The drift is mostly caused by temperature changes. A typical value for the AMP120 is 2.5 µV/°C.
cbrideau  (posted 2018-09-05 13:23:33.243)
So the AG/CG switch flips the polarity of the output? (depending on how the photodiode is biased?)
swick  (posted 2018-09-14 03:38:24.0)
This is a response from Sebastian at Thorlabs. Thank you for the inquiry. AG and CG is referred to the Photodiode (PD) which is either Anode- or Cathode grounded. The polarity of the output (AMP) changes when switching from AG to CG and vise versa. AMP110 (1 kHz) and AMP120 (100 kHz) have low bandwidth so they are actually designed to amplify signals from PDs without bias. Basically it would work to amplify signals from PDs with bias but the AMP would decrease the bandwidth.

Transimpedance Amplifiers for Photodiodes

Key Specsa
Item # Transimpedance Gain Bandwidth Rise/Fall Time Input Current Limits Output Impedance Mass (Weight)
AMP130 1 kV/A DC to 100 kHz <3 µs ±2 mA 50 Ω 80 g (2.8 oz)
AMP120 100 kV/A DC to 100 kHz <3 µs ±20 µA
AMP110 10 MV/A DC to 1 kHz <300 µs ±200 nA
  • Refer to the Specs tab for complete specifications.
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
AMP130 Support Documentation
AMP130NEW!Transimpedance Amplifier, 1 kV/A Gain, 100 kHz Bandwidth
$275.83
Today
AMP120 Support Documentation
AMP120Transimpedance Amplifier, 100 kV/A Gain, 100 kHz Bandwidth
$275.83
Today
AMP110 Support Documentation
AMP110Transimpedance Amplifier, 10 MV/A Gain, 1 kHz Bandwidth
$275.83
Today

Mounting Clamps


Click to Enlarge

EF123 Filter Mounted using an ECM100 on a Ø1/2" Post

Aluminum Clamps, Post Mountable
These anodized aluminum clamps provide secure mounting for the amplifiers sold above. The clamp can snap onto the side of the device and the flexure lock can be tightened using the 2 mm (5/64") hex locking screw on the side. The ECM100 fits onto the 1.00" side, while the ECM125 fits onto the 1.25" side.

Each clamp has a #8 (M4) counterbore on the bottom, allowing it to be mounted on a Ø1/2" post or any surface with an 8-32 (M4) tap. The clamp must be mounted via the counterbore before the device is attached, as the counterbore will not be accessible once the housing is secured in the clamp.

Plastic Clamp, Double Sided
The EPS125 clamp is designed to connect two rectangular housings for compact setups; the clamp attaches to the 1.25" side of each device.

Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
ECM100 Support Documentation
ECM100Aluminum Clamp for Electronics Housing, 1.00"
$17.75
Today
ECM125 Support Documentation
ECM125Aluminum Clamp for Electronics Housing, 1.25"
$18.29
Today
EPS125 Support Documentation
EPS125Double-Sided Plastic Clamp for Electronics Housings, 1.25", Qty. 2
$6.37
Today
Log In  |   My Account  |   Contact Us  |   Careers  |   Privacy Policy  |   Home  |   FAQ  |   Site Index
Regional Websites: West Coast US | Europe | Asia | China | Japan
Copyright 1999-2019 Thorlabs, Inc.
Sales: 1-973-300-3000
Technical Support: 1-973-300-3000


High Quality Thorlabs Logo 1000px:Save this Image