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Booster Optical Amplifiers, 1050 nm
High-Power BOA with SM Fiber and FC/APC Connectors
BOA with PM Fiber and FC/APC Connectors, Closeup of Butterfly Package Shown
The center wavelength of a BOA can be readily tailored for specific applications. It is quite common to adjust the BOA wavelength spectrum to match the specific laser source. Please contact us if you have custom wavelength requirements for pilot-projects or OEM applications.
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When current is applied across the ridge waveguide, excited state electrons are stimulated by input light, leading to photon replication and signal gain.
Booster Optical Amplifiers (BOAs) are single-pass, traveling-wave amplifiers that perform well with both monochromatic and multi-wavelength signals. Since BOAs only amplify one state of polarization, they are best suited for applications where the input polarization of the light is known. Each BOA consists of a highly efficient GaAs/InGaAs Quantum Well (QW) layer structure, designed for amplifying polarized optical signals in the 1050 nm band, and is also an ideal gain medium for implementing wide-bandwidth tunable lasers.
As seen in the schematic to the right, the input and output of the amplifier are coupled to the active layer of the ridge waveguide on the optical amplifier chip. The device is contained in a standard 14-pin butterfly package, with either single mode or polarization-maintaining fiber pigtails that are terminated with FC/APC connectors. The BOA1137P and BOA1050P use polarization-maintaining PM980-XP fiber with the connector key aligned to the slow axis, while the BOA1137S and BOA1050S use non-polarization-maintaining HI1060 fiber. An integrated thermoelectric cooler (TEC) and thermistor allows these BOAs to be temperature controlled, thus stabilizing the gain and the spectrum.
For additional details concerning the construction and operating parameters of our BOAs, please see the Optical Amplifiers tab.
ASE Center Wavelength
Mechanical Drawing and Pin Assignments for 1050 nm BOAs
Semiconductor Optical Amplifiers (SOAs and BOAs) are similar in design to Fabry-Perot Laser Diodes. The difference being that Fabry-Perot laser diodes have reflective coatings on both end faces of the semiconductor chip. The optical feedback from the end faces establishes a cavity in which lasing can occur. SOAs and BOAs have an anti-reflection (AR) coating on both end faces of the semiconductor chip. The AR coatings limit the optical feedback into the chip so that lasing does not occur.
As is typical for all amplifiers, SOA/BOAs operate in two regimes: a linear, flat, constant gain regime and a non-linear, saturated output regime. When used to amplify a modulated signal, the linear regime is typically used to eliminate pattern-dependent distortion, multi-channel cross-talk and transient response issues common to EDFAs. The non-linear regime is used to take advantage of the highly non-linear attributes of the semiconductor gain medium (cross-gain modulation, cross phase modulation) to perform wavelength conversion, optical 3R regeneration, header recognition, and other high-speed optical signal processing functions.
For a CW input signal, the amount of power that can be produced by the amplifier is determined by the saturation output power (Psat) parameter. Psat is defined as the output power at which the small-signal gain has been compressed by 3 dB. The maximum amount of CW power that can be extracted is approximately 3 dB higher than the saturation power.