C- and L-Band Single Angled Facet Gain Chips

Features

• Broad Tuning Range
• High Output Power
• Ultra-Low Angled Facet Reflectance: 0.005% (Typ)
• Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
• Gain Medium for Widely Tunable External Cavity Semiconductor Lasers

Single Angled Facet (SAF) gain chips use a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, SAF gain chips are superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser.

Our C-band and L-Band SAF gain chips are each available in two configurations. The SAF1126C and SAF1118C feature our C-band chip and L-band chip, respectively, on a submount, while the SAF1126H and SAF1118H feature the same C-band chip and L-band chip, respectively, on the same submount with an added heatsink and connected cathode and anode leads.

The SAF1126C C-Band chip and SAF1118C L-band chip are offered on a submount, while the SAF1126H C-band chip and SAF1118H L-band chip are provided on the same submount with a heatsink and connected cathode and anode leads.