Products HomeC- and L-Band Single Angled Facet Gain Chips
- InP Gain Chip on Submount or Submount with Heatsink
- Ultra-Low Reflectance at Angled Facet
- Custom Coatings Available
Actual Size Compared
to US One Cent Coin
SAF1118C
Chip on Submount
SAF1126H
Chip on Submount
with Heatsink
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Features
- Broad Tuning Range
- High Output Power
- Ultra-Low Angled Facet Reflectance: 0.005% (Typ)
- Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
- Gain Medium for Widely Tunable External Cavity Semiconductor Lasers
Single Angled Facet (SAF) gain chips use a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, SAF gain chips are superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser.
Our C-band and L-Band SAF gain chips are each available in two configurations. The SAF1126C and SAF1118C feature our C-band chip and L-band chip, respectively, on a submount, while the SAF1126H and SAF1118H feature the same C-band chip and L-band chip, respectively, on the same submount with an added heatsink and connected cathode and anode leads.
The SAF1126C C-Band chip and SAF1118C L-band chip are offered on a submount, while the SAF1126H C-band chip and SAF1118H L-band chip are provided on the same submount with a heatsink and connected cathode and anode leads.
SAF1126C C-Band SAF Gain Chip
| Parameter* | Min | Typ | Max |
|---|---|---|---|
| Operating Current | - | 300 mA | 350 mA |
| Operating Wavelength Range | 1528 nm | - | 1568 nm |
| Threshold Current | - | 60 mA | 75 mA |
| Output Power over Band | 40 mW | 60 mW | - |
| Side-Mode Suppression Ratio | - | 50 dB | - |
| Angled Facet Reflectivity | - | 0.005% | 0.01% |
| Normal Facet Reflectivity | - | 10% | - |
| Forward Voltage | - | 1.3 V | 1.8 V |
| Chip Length | - | 1.0 mm | - |
| Waveguide Refractive Index | - | 3.2 | - |
| Lateral Beam Exit Angle | - | 19.5o | - |
| Transverse Beam Divergence (FWHM) |
26o | 30o | 34o |
| Lateral Beam Divergence (FWHM) |
- | 16o | - |
*Specifications based on a Littrow external cavity configuration, external cavity losses that are <5 dB CW, and a chip temperature of 25 oC.
SAF1118C L-Band SAF Gain Chip
| Parameter | Min | Typ | Max |
|---|---|---|---|
| Operating Current | - | 300 mA | 350 mA |
| Operating Wavelength Range | 1568 nm | - | 1608 nm |
| Threshold Current | - | 60 mA | 75 mA |
| Output Power over Band | 40 mW | 60 mW | - |
| Side-Mode Suppression Ratio | - | 50 dB | - |
| Angled Facet Reflectivity | - | 0.005% | 0.01% |
| Normal Facet Reflectivity | - | 10% | - |
| Forward Voltage | - | 1.3 V | 1.8 V |
| Chip Length | - | 1.0 mm | - |
| Waveguide Refractive Index | - | 3.2 | - |
| Lateral Beam Exit Angle | - | 19.5o | - |
| Transverse Beam Divergence (FWHM) |
26o | 30o | 34o |
| Lateral Beam Divergence (FWHM) |
- | 16o | - |
*Specifications based on a Littrow external cavity configuration, external cavity losses that are <5 dB CW, and a chip temperature of 25 oC.
SAF1126 Performance
SAF1118 Performance
Click to Enlarge
Diagram of the Anode and Cathode Pins of the SAF1126C and SAF1118C
Click to Enlarge
Diagram of the Anode and Cathode Pins of the SAF1126H and SAF1118H
| Posted Comments: | |
Yang Zhang
(posted 2021-03-29 21:50:42.46) Hi, I'm wondering is the chip index guiding? If it is, what is the height and width of the core region? I'd like to design a mode converter to optimize the coupling.
Best,
Yang YLohia
(posted 2021-03-31 01:44:57.0) Hello Yang, yes, this is index-guided (index of refraction given in the specs table). While we can't share the exact height and width of the waveguide (this information is proprietary), we can say that the mode size at the facet is roughly 1 um x 4 um. Yoon-Soo Jang
(posted 2021-01-25 14:19:48.883) Hi, I am Yoon-Soo JANG at KRISS working on distance standards group.
I am interesting on your "SAF1126H" and is it possible to change reflectance from 10 % to 90 % (10 % transmission) ?
Hope to have a great day.
Sincerely,
Yoon-Soo JANG YLohia
(posted 2021-01-26 10:19:04.0) Hello Yoon-Soo, thank you for contacting Thorlabs. Custom items can be requested by clicking on the "Request Quote" button above. We will contact you directly about this. Haiyang Yu
(posted 2019-12-27 09:44:25.003) 请问这款芯片的线宽展宽因子估计是多少？ YLohia
(posted 2019-12-27 08:31:37.0) Thank you for contacting Thorlabs. Our Tech Support team in China can be reached via email at techsupport-cn@thorlabs.com. We will reach out to you directly. |
 SAF Gain Chips,λ = 1550 or 1590 nm |