Single-Crystal Diamonds


  • Diamonds Grown by Chemical Vapor Deposition
  • Uniform Distribution of NV Centers
  • Quantum-Grade or Electronic-Grade Diamonds Available

ELSC45

NV: ≤0.03 ppb
4.5 mm x 4.5 mm x 0.5 mm

Nitrogen-Vacancy Centers

Nitrogen-vacancy centers are defects in the
carbon lattice that are paired with adjacent vacancies.

V

N

C

DNVB14

NV: 4.5 ppm
Coherence Time T2: 10 µs
3.0 mm x 3.0 mm x 0.5 mm

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Nitrogen Vacancy Transition Diagram
Click to Enlarge

The energy level diagram for a diamond NV center in zero magnetic field. The spin triplet ground (3A2) and excited (3E) states have an energy difference of 637 nm (1.945 eV), and each is split into singly degenerate ms = 0 and doubly degenerate ms = ±1 spin states with energy differences of Dgs = 2.88 GHz (12 µeV) and Des = 1.42 GHz (5.9 µeV), respectively. Note, the scale of the spin sub-level splitting is highly exaggerated to be visible. There are also two optically dark, ms = 0 intermediate states (1A and 1E) with an energy difference of 1042 nm (1.190 eV).

Features

  • Single-Crystal Diamonds Grown by Chemical Vapor Deposition (CVD)
  • Quantum-Grade or Electronic-Grade Diamonds Available

These single-crystal diamonds, which are manufactured by Element Six using patented processes and offered by Thorlabs to enable quantum research advancements, are ideal for magnetic field sensing, RF detection, gyroscopes, masers, quantum demonstrations, quantum computing, quantum communication, and research applications. The quantum-grade diamonds are available with either 300 ppb or 4.5 ppm nitrogen-vacancy (NV) center densities. For users who wish to create their own defect centers, electronic-grade diamonds with ≤0.03 ppb NV concentration and low background impurity is available. These diamonds are useful for applications such as fabricating ionizing radiation-resistant devices.

Nitrogen Vacancy Transition Diagram
Click to Enlarge

The triplet ground state of an NV- center shows fine structure splitting (Dgs = 2.88 GHz) between the ms = 0 and ms = ±1 states due to spin-spin interactions. Application of an external magnetic field (B) along the [111] defect axis causes a further splitting (ΔE = 2gµBB) of the ms = ±1 states due to the Zeeman effect, where g is the Landé factor and µB is the Bohr magneton.
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Posted Comments:
Jing Zhou  (posted 2022-09-02 21:37:48.633)
您好,我想问一下关于: 1.DNVB1参数表里的Edge Features是什么意思? 2.NV色心在金刚石晶片表面均匀分布吗? 3.晶片中制作好的NV色心的深度(与上表面的距离)是多少?

Quantum-Grade Single-Crystal Diamonds

Item # DNVB1 DNVB14
Quantum Properties
Typical NV Center Density 300 ppb 4.5 ppm
Typical Spin Coherence Time T2* a 1 µs 0.5 µs
Typical Spin Coherence Time T2 b 200 µs 10 µs
General Specifications
Crystallographic Orientation {100} ± 3°
Edge Orientation <100>
Typical Dimensions (L x W x T) 3.0 mm x 3.0 mm x 0.5 mm
Dimensional Tolerance 0.05 mm
Edge Features <0.2 mm
Roughness, Ra <10 nm
13C Fraction 1.1%
  • Inhomogeneous Transverse Spin Coherence Time
  • Hahn-Echo Measured Spin Coherence Time
  • Two NV Center Densities Available:
    • DNVB1: 300 ppb
    • DNVB14: 4.5 ppm
  • Available as a 3.0 mm x 3.0 mm Square

These quantum-grade diamonds are available with either 300 ppb or 4.5 ppm nitrogen-vacancy (NV) center densities. This produces diamond NV (DNV) centers with readable and writable spin qubits that have long lifetimes at room temperature, advantages that arise from the structure and strong covalent bonds of diamond. The density of NV spin centers, their uniform distribution, the spin characteristics, and the compact form factor make this diamond ideal for magnetic field sensing, RF detection, gyroscopes, masers, quantum demonstrations, and research applications.

Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
DNVB1 Support Documentation
DNVB1Single-Crystal Diamond, Nitrogen-Vacancy Center Density: 300 ppb
$1,512.00
Today
DNVB14 Support Documentation
DNVB14Single-Crystal Diamond, Nitrogen-Vacancy Center Density: 4.5 ppm
$3,260.25
Lead Time

Electronic-Grade Single-Crystal Diamonds

Item # ELSC40 ELSC45
Crystallographic Orientation {100} ± 3°
Edge Orientation <110>
Dimensions (L x W x T) 4.0 mm x 4.0 mm x 0.5 mm 4.5 mm x 4.5 mm x 0.5 mm
Dimensional Tolerance
(Length and Width)
+0.2/-0.0 mm
Thickness Tolerance ±0.05 mm
Laser Kerf ≤5°
Edge Features <0.2 mm
Roughness, Ra <5 nm
Boron Concentration <1 ppb
Nitrogen Concentration ≤5 ppb
Typical NV Concentration ≤0.03 ppb
13C Fraction 1.1%
  • Low Nitrogen-Vacancy (NV) Center Density: ≤0.03 ppb
  • Available in Two Sizes:
    • 4.0 mm x 4.0 mm Square
    • 4.5 mm x 4.5 mm Square

These electronic-grade, single-crystal diamonds contain ≤5 ppb nitrogen concentration and typically ≤0.03 ppb nitrogen-vacancy (NV) concentration. Additionally, the diamonds have a very low background impurity of <1 ppb boron concentration and exhibit electron mobility that is typically greater than 2000 cm2/V⋅s. These diamonds allow the user to probe the as-grown NV defects or generate their own via ion implantation or epitaxial growth. Alternatively, they can be used as a high thermal conductivity and optically transparent heat sink for a high power laser or microelectronic device, as well as for custom-made diamond electronic devices such as radiation detectors. The diamonds are offered as 4.0 mm x 4.0 mm or 4.5 mm x 4.5 mm squares.

Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
ELSC40 Support Documentation
ELSC40NEW!Single-Crystal Diamond, Nitrogen-Vacancy Center Density: ≤0.03 ppb, 4.0 mm x 4.0 mm x 0.5 mm
$2,662.00
Today
ELSC45 Support Documentation
ELSC45NEW!Single-Crystal Diamond, Nitrogen-Vacancy Center Density: ≤0.03 ppb, 4.5 mm x 4.5 mm x 0.5 mm
$2,967.00
Today