• Si, InGaAs, Ge, and Dual Band (Si/InGaAs) Detectors Available
  • Available in TO Can, FC Connector, and Flat Wafer Body Styles
  • Available in Hermetically Sealed Packages










Related Items

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Mounted and Unmounted Detectors
Unmounted Photodiodes (200 - 2600 nm)
Calibrated Photodiodes (350 - 1800 nm)
Mounted Photodiodes (200 - 1800 nm)
Thermopile Detectors (0.2 - 15 µm)
Photovoltaic Detectors (2.0 - 10.6 µm)
Pigtailed Photodiodes (320 - 1000 nm)


  • Si, InGaAs, Ge, and Dual Band (Si/InGaAs) Unmounted Photodiodes Available
  • Wavelength Ranges from 200 to 2600 nm
  • FDS100 Si Photodiode Also Available in Packs of 5, 10, or 50

Thorlabs stocks a wide selection of photodiodes (PD) with various active area sizes and packages. Discrete PIN junction photodiodes include indium gallium arsenide (InGaAs) and silicon (Si) materials. Germanium (Ge) photodiodes, which are based on an N-on-P structure, are also available.

Our fastest photodiodes are the FDS015, FDS02, and FDS025 Si photodiodes. The FDS015 Si photodiode has a 35 ps rise time and a 0.65 pF junction capacitance, making it the highest speed, lowest capacitance photodiode offered below. Alternatively, the FD11A Si photodiode has a dark current of 2 pA, making it our photodiode with the lowest dark current. The FD10D and FD05D are InGaAs photodiodes with high responsivity from 900 to 2600 nm, allowing detection of wavelengths beyond the normal 1800 nm range of typical InGaAs photodiodes. The DSD2 is a dual-band photodiode, which incorporates two photodetectors sandwiched on top of each other (Si substrate on top of an InGaAs substrate), offering a combined wavelength range of 400 to 1700 nm.

To complement our photodiode product line, we offer mounted photodiodes and a range of compatible photodiode sockets. Please note that the PDs sold below are not calibrated, meaning responsivity will differ slightly from lot to lot; refer to the Response Variation tab for more information. We also offer calibrated photodiodes, which come with with NIST-traceable calibration, to correct for the differences in responsivity. Many of our photodiodes can be reverse voltage biased using the PBM42 DC Bias Module for faster speed and higher optical power detection.

For information on the photodiode saturation limit and the noise floor, as well as a collection of Thorlabs-conducted experiments regarding spatial uniformity (or varying responsivity) and dark current as a function of temperature, refer to the Lab Facts tab. This tab also outlines the theory and methods we use to define the specifications of our photodiodes. For example, the Noise Equivalent Power (NEP) as a Function of Temperature section provides background on NEP values specified by shot noise and thermal noise. With zero bias (Photovoltaic Mode), the NEP is specified by the thermal noise only, which is caused by the shunt resistance of the photodiode. The Photodiode Tutorial provides more general information regarding the operation, terminology, and theory of photodiodes.

Inhomogeneity on the edge of an active area of the detector can generate unwanted capacitance and resistance that distorts the time-domain response of a photodiode. Thorlabs therefore recommends that the incident light on the photodiode is well centered on the active area. This can be accomplished by placing a focusing lens or pinhole in front of the detector element.

Thorlabs offers spectral-flattening filters that are designed to improve the response uniformity of our silicon photodiodes. Click here to learn more.

The responsivity of a particular photodiode varies from lot to lot. Due to this, the photodiode you receive may have a slightly different response than what is represented below. For example, to the right, a graph for the FDS1010 photodiode shows the extent that the response may vary. This data was collected from 104 photodiodes. Minimum, Average, and Maximum responsivity was calculated at each data point and has been plotted.

To view typical responsivity vs. wavelength data for each individual photodiode, please click the Info buttons in the product specifications tables below.

Photodiode Tutorial

Theory of Operation

A junction photodiode is an intrinsic device that behaves similarly to an ordinary signal diode, but it generates a photocurrent when light is absorbed in the depleted region of the junction semiconductor. A photodiode is a fast, highly linear device that exhibits high quantum efficiency and may be used in a variety of different applications.

It is necessary to be able to correctly determine the level of the output current to expect and the responsivity based upon the incident light. Depicted in Figure 1 is a junction photodiode model with basic discrete components to help visualize the main characteristics and gain a better understanding of the operation of Thorlabs' photodiodes.

Equation 1
Photodiode Circuit Diagram
Figure 1: Photodiode Model

Photodiode Terminology

The responsivity of a photodiode can be defined as a ratio of generated photocurrent (IPD) to the incident light power (P) at a given wavelength:

Equation 2

Modes of Operation (Photoconductive vs. Photovoltaic)
A photodiode can be operated in one of two modes: photoconductive (reverse bias) or photovoltaic (zero-bias). Mode selection depends upon the application's speed requirements and the amount of tolerable dark current (leakage current).

In photoconductive mode, an external reverse bias is applied, which is the basis for our DET series detectors. The current measured through the circuit indicates illumination of the device; the measured output current is linearly proportional to the input optical power. Applying a reverse bias increases the width of the depletion junction producing an increased responsivity with a decrease in junction capacitance and produces a very linear response. Operating under these conditions does tend to produce a larger dark current, but this can be limited based upon the photodiode material. (Note: Our DET detectors are reverse biased and cannot be operated under a forward bias.)

In photovoltaic mode the photodiode is zero biased. The flow of current out of the device is restricted and a voltage builds up. This mode of operation exploits the photovoltaic effect, which is the basis for solar cells. The amount of dark current is kept at a minimum when operating in photovoltaic mode.

Dark Current
Dark current is leakage current that flows when a bias voltage is applied to a photodiode. When operating in a photoconductive mode, there tends to be a higher dark current that varies directly with temperature. Dark current approximately doubles for every 10 °C increase in temperature, and shunt resistance tends to double for every 6 °C rise. Of course, applying a higher bias will decrease the junction capacitance but will increase the amount of dark current present.

The dark current present is also affected by the photodiode material and the size of the active area. Silicon devices generally produce low dark current compared to germanium devices which have high dark currents. The table below lists several photodiode materials and their relative dark currents, speeds, sensitivity, and costs.

Material Dark Current Speed Spectral Range Cost
Silicon (Si) Low High Speed Visible to NIR Low
Germanium (Ge) High Low Speed NIR Low
Gallium Phosphide (GaP) Low High Speed UV to Visible Moderate
Indium Gallium Arsenide (InGaAs) Low High Speed NIR Moderate
Indium Arsenide Antimonide (InAsSb) High Low Speed NIR to MIR High
Extended Range Indium Gallium Arsenide (InGaAs) High High Speed NIR High
Mercury Cadmium Telluride (MCT, HgCdTe) High Low Speed NIR to MIR High

Junction Capacitance
Junction capacitance (Cj) is an important property of a photodiode as this can have a profound impact on the photodiode's bandwidth and response. It should be noted that larger diode areas encompass a greater junction volume with increased charge capacity. In a reverse bias application, the depletion width of the junction is increased, thus effectively reducing the junction capacitance and increasing the response speed.

Bandwidth and Response
A load resistor will react with the photodetector junction capacitance to limit the bandwidth. For best frequency response, a 50 Ω terminator should be used in conjunction with a 50 Ω coaxial cable. The bandwidth (fBW) and the rise time response (tr) can be approximated using the junction capacitance (Cj) and the load resistance (RLOAD):

Equation 3

Noise Equivalent Power
The noise equivalent power (NEP) is the input signal power that results in a signal-to-noise ratio (SNR) of 1 in a 1 Hz output bandwidth. This is useful, as the NEP determines the ability of the detector to detect low level light. In general, the NEP increases with the active area of the detector and is given by the following equation:

Photoconductor NEP

Here, S/N is the Signal to Noise Ratio, Δf is the Noise Bandwidth, and Incident Energy has units of W/cm2. For more information on NEP, please see Thorlabs' Noise Equivalent Power White Paper.

Terminating Resistance
A load resistance is used to convert the generated photocurrent into a voltage (VOUT) for viewing on an oscilloscope:

Equation 4

Depending on the type of the photodiode, load resistance can affect the response speed. For maximum bandwidth, we recommend using a 50 Ω coaxial cable with a 50 Ω terminating resistor at the opposite end of the cable. This will minimize ringing by matching the cable with its characteristic impedance. If bandwidth is not important, you may increase the amount of voltage for a given light level by increasing RLOAD. In an unmatched termination, the length of the coaxial cable can have a profound impact on the response, so it is recommended to keep the cable as short as possible.

Shunt Resistance
Shunt resistance represents the resistance of the zero-biased photodiode junction. An ideal photodiode will have an infinite shunt resistance, but actual values may range from the order of ten Ω to thousands of MΩ and is dependent on the photodiode material. For example, and InGaAs detector has a shunt resistance on the order of 10 MΩ while a Ge detector is in the kΩ range. This can significantly impact the noise current on the photodiode. For most applications, however, the high resistance produces little effect and can be ignored.

Series Resistance
Series resistance is the resistance of the semiconductor material, and this low resistance can generally be ignored. The series resistance arises from the contacts and the wire bonds of the photodiode and is used to mainly determine the linearity of the photodiode under zero bias conditions.

Common Operating Circuits

Reverse Biased DET Circuit
Figure 2: Reverse-Biased Circuit (DET Series Detectors)

The DET series detectors are modeled with the circuit depicted above. The detector is reverse biased to produce a linear response to the applied input light. The amount of photocurrent generated is based upon the incident light and wavelength and can be viewed on an oscilloscope by attaching a load resistance on the output. The function of the RC filter is to filter any high-frequency noise from the input supply that may contribute to a noisy output.

Reverse Biased DET Circuit
Figure 3: Amplified Detector Circuit

One can also use a photodetector with an amplifier for the purpose of achieving high gain. The user can choose whether to operate in Photovoltaic of Photoconductive modes. There are a few benefits of choosing this active circuit:

  • Photovoltaic mode: The circuit is held at zero volts across the photodiode, since point A is held at the same potential as point B by the operational amplifier. This eliminates the possibility of dark current.
  • Photoconductive mode: The photodiode is reversed biased, thus improving the bandwidth while lowering the junction capacitance. The gain of the detector is dependent on the feedback element (Rf). The bandwidth of the detector can be calculated using the following:

Equation 5

where GBP is the amplifier gain bandwidth product and CD is the sum of the junction capacitance and amplifier capacitance.

Effects of Chopping Frequency

The photoconductor signal will remain constant up to the time constant response limit. Many detectors, including PbS, PbSe, HgCdTe (MCT), and InAsSb, have a typical 1/f noise spectrum (i.e., the noise decreases as chopping frequency increases), which has a profound impact on the time constant at lower frequencies.

The detector will exhibit lower responsivity at lower chopping frequencies. Frequency response and detectivity are maximized for

Photoconductor Chopper Equation

This tab contains a collection of experiments performed at Thorlabs regarding the performance of photodiodes we offer. Each section is its own independent experiment, which can be viewed by clicking in the appropriate box below. Photodiode Saturation Limit and Noise Floor explores how different conditions, including temperature, resistivity, reverse-bias voltage, responsivity, and system bandwidth, can affect noise in a photodiode's output. Photodiode Spatial Uniformity explores variations in the responsivity as a small-diameter light beam is scanned across the active area of the photodiode. Photodiodes with different material compositions are tested, and eight units of one silicon-based model are tested to investigate unit-to-unit variations. Dark Current as a Function of Temperature and Noise Equivalent Power (NEP) as a Function of Temperature describe how dark current and NEP, respectively, vary with temperature and how measurements are affected. Beam Size and Photodiode Saturation shows how the photodiode saturation point changes with the incident beam size and investigates several models to explain the results. Bias Voltage examines the effects of incident power on the effective reverse bias voltage of a photodiode circuit and verifies a reliable model for predicting those changes.

Photodiode Saturation Limit and Noise Floor

About Our Lab Facts
Our application engineers live the experience of our customers by conducting experiments in Alex’s personal lab. Here, they gain a greater understanding of our products’ performance across a range of application spaces. Their results can be found throughout our website on associated product pages in Lab Facts tabs. Experiments are used to compare performance with theory and explore the benefits and drawbacks of using similar products in unique setups, in an attempt to understand the intricacies and practical limitations of our products. In all cases, the theory, procedure, and results are provided to assist with your buying decisions.

Pulsed Laser Emission: Power and Energy Calculations

Determining whether emission from a pulsed laser is compatible with a device or application can require referencing parameters that are not supplied by the laser's manufacturer. When this is the case, the necessary parameters can typically be calculated from the available information. Calculating peak pulse power, average power, pulse energy, and related parameters can be necessary to achieve desired outcomes including:

  • Protecting biological samples from harm.
  • Measuring the pulsed laser emission without damaging photodetectors and other sensors.
  • Exciting fluorescence and non-linear effects in materials.

Pulsed laser radiation parameters are illustrated in Figure 1 and described in the table. For quick reference, a list of equations are provided below. The document available for download provides this information, as well as an introduction to pulsed laser emission, an overview of relationships among the different parameters, and guidance for applying the calculations. 



Period and repetition rate are reciprocal:    and 
Pulse energy calculated from average power:       
Average power calculated from pulse energy:        
Peak pulse power estimated from pulse energy:            

Peak power and average power calculated from each other:
Peak power calculated from average power and duty cycle*:
*Duty cycle () is the fraction of time during which there is laser pulse emission.
Pulsed Laser Emission Parameters
Click to Enlarge

Figure 1: Parameters used to describe pulsed laser emission are indicated in the plot (above) and described in the table (below). Pulse energy (E) is the shaded area under the pulse curve. Pulse energy is, equivalently, the area of the diagonally hashed region. 

Parameter Symbol Units Description
Pulse Energy E Joules [J] A measure of one pulse's total emission, which is the only light emitted by the laser over the entire period. The pulse energy equals the shaded area, which is equivalent to the area covered by diagonal hash marks.
Period Δt  Seconds [s]  The amount of time between the start of one pulse and the start of the next.
Average Power Pavg Watts [W] The height on the optical power axis, if the energy emitted by the pulse were uniformly spread over the entire period.
Instantaneous Power P Watts [W] The optical power at a single, specific point in time.
Peak Power Ppeak Watts [W] The maximum instantaneous optical power output by the laser.
Pulse Width Seconds [s] A measure of the time between the beginning and end of the pulse, typically based on the full width half maximum (FWHM) of the pulse shape. Also called pulse duration.
Repetition Rate frep Hertz [Hz] The frequency with which pulses are emitted. Equal to the reciprocal of the period.

Example Calculation:

Is it safe to use a detector with a specified maximum peak optical input power of 75 mW to measure the following pulsed laser emission?

  • Average Power: 1 mW
  • Repetition Rate: 85 MHz
  • Pulse Width: 10 fs

The energy per pulse:

seems low, but the peak pulse power is:

It is not safe to use the detector to measure this pulsed laser emission, since the peak power of the pulses is >5 orders of magnitude higher than the detector's maximum peak optical input power.

Posted Comments:
Sultan Alshaibani  (posted 2024-05-23 00:24:58.487)
Dear Sir/Madam, I hope this message finds you well. My name is Sultan Alshaibani, and I am a PhD candidate at King Abdullah University of Science and Technology (KAUST). I am currently in the process of completing my doctoral dissertation, which focuses on the development of a silicon-based photodetector. I am writing to request permission to extract data from Thorlabs' FDS010 Si-based photodetector. Specifically, I would like to include the following figure in my thesis: ---------------------------------------------------------- Figure 1: Typical responsivity spectrum of Si-based photodetector. This figures is critical to illustrating key points in my research and providing a comprehensive understanding of the subject matter. I assure you that proper attribution will be given to the original source, and the figure will be used solely for academic purposes within my dissertation. The dissertation will be submitted to KAUST's library and may be made available online for academic and research purposes. Please let me know if there are any forms or additional information required to process this request. I would be grateful for your consideration and approval. Thank you very much for your time and assistance. Best regards, Sultan Alshaibani PhD Candidate, Department of Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) King Abdullah University of Science and Technology (KAUST) +966 50 057 2298
cdolbashian  (posted 2024-05-28 11:32:03.0)
Thank you for reaching out to us with this inquiry and for reaching out to us to request permission to use our images in your publication. I have contacted you directly with the appropriate paperwork which will permit your use of our images.
Pokuan Shen  (posted 2024-05-22 18:56:00.003)
Dear Sir/Madam This is Pokuan Shen from AuthenX, Taiwan. I have one question regarding the FDS02. Can it support a FC/PC connector with a high NA multimode fiber Thorlabs M123L01? If so, how is the optical couplinge efficiency between the fiber and photodiode, or the responsivity of whole receiver, including photodiode and high NA fiber. Thank you. PK Shen
cdolbashian  (posted 2024-05-24 10:48:04.0)
Thank you for reaching out to us with this inquiry. These fiber-coupled diodes are designed to be used with SM fibers, as the active area is fairly small. Overfilling the area can result in slower response time and loss of signal. This may be fine depending on your application, and I have contacted you directly to discuss this.
Asger Gardner  (posted 2024-02-29 09:24:34.893)
Hello, Looking through your product range of photodiodes, I cannot seem to find any that are Silicon Carbide (SiC) based. I'm looking for these with regards to solar-blind detection of UV signals, since SiC-based detectors are sensitive in the range from 200-400 nm. Of particular interest would be avalanche photodiodes for fast response to low signals.
ksosnowski  (posted 2024-03-07 04:36:31.0)
Hello Asger, thanks for reaching out to Thorlabs. We do not currently offer any Silicon Carbide photodiodes. We previously offered some detectors with Gallium Phosphide (GaP) photodiodes however this type of diode is no longer produced and we have so far been unable to source an exact replacement for UV detection like this. Our APD130A2 avalanche detector uses UV-enhanced Silicon to provide sensitivity down to 200nm. However this would require some optical filtering to cutoff wavelengths above 400nm. I have reached out directly to discuss your application in further detail.
Hartmut Becker  (posted 2024-02-13 09:19:37.587)
The junction capacitance of FDS 100 is 24 pF. What is the value of the Sunt resistance?
cdolbashian  (posted 2024-02-16 04:24:15.0)
Thank you for the inquiry. The shunt resistance of the FDS100 is 1GOhm at room temp.
anais leproux  (posted 2024-02-12 08:50:41.523)
Hello, I would like to pair 2 photodiodes that were bought together a few years ago, model FD11A. I guess they were made from the same batch. Could you tell me about "production linearity"? I want to make sure the specs are close enough so that I can use the 2 photodiodes in a pairing configuration. Could you also tell me about any potential drift in performance (given these photodiodes were purchased about 4 years ago)? Many thanks!
cdolbashian  (posted 2024-02-13 01:40:07.0)
Thank you for reaching out to us with this inquiry. As these products are not individually characterized for lifetime or linearity, it would behoove the end user to characterize each component individually, if they are to be used in a paired-diode application. I have contacted you directly to discuss this further.
khady lo  (posted 2024-01-15 09:16:34.367)
on arrive pas à voir la tension max que peut accepter la photodiode FD05D.
ksosnowski  (posted 2024-01-16 10:59:19.0)
Hello Khady, thanks for reaching out to Thorlabs. FD05D has a max reverse bias voltage spec of 1.8V. An engineer from your local technical support team is reaching out directly for further discussions.
user  (posted 2023-12-12 23:48:05.577)
What is FDS010 window thickness (fused silica) ?
ksosnowski  (posted 2023-12-12 11:04:22.0)
Hello, thanks for reaching out to Thorlabs. The FDS010 photodiode window is 0.5mm thick quartz glass.
Takemasa Tamanuki  (posted 2023-11-27 21:00:27.57)
Regarding your product of FGA01FC (InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area, FC/PC Bulkhead), Can this product connect FC/APC? (I mean, does this product accept FC/APC-fiber-code as well as FC/SPC?) Thanks.
cdolbashian  (posted 2023-12-11 09:37:46.0)
Thank you for reaching out to us with this inquiry. You can certainly connect an APC-terminated fiber, but due to the difference in the geometry of the terminated fiber, you will likely have some misalignment of the fiber core with respect to the active area of the sensor. In this with this in mind, I can say that it is indeed compatible, but you will likely see attenuated signal when compared to a -PC style connectorized fiber.
Patryk Troc  (posted 2023-10-25 08:23:47.523)
Dear Sir/Madam, I would like to ask one question about dimensions, which diameter pins of this component have? There isn't any information about it in datasheet, In DXF file there are holes with 0.45mm diameter, this this correct dimension? Yours faithfully, Patryk Troc
ksosnowski  (posted 2023-10-25 11:44:48.0)
Hello Patryk, thanks for reaching out to Thorlabs. The pin diameter for FDS02 is 0.5mm. This model uses the same photodiode from FDS025 and it is additionally factory aligned and focused in a fiber bulkhead. However you can use the pin dimensions from this photodiode as well for reference.
Ray Lambert  (posted 2023-10-04 17:53:32.297)
what is the subsitute for this detector
jdelia  (posted 2023-10-05 01:20:59.0)
Thank you for contacting Thorlabs. While we unfortunately do not offer a direct replacement for the obsolete FGAP71, I have reached out to you directly to discuss your application and which alternative solutions may be suitable for you.
Romain Fourcade  (posted 2023-09-25 15:22:35.187)
Dear, Do you think it is possible to have the FDG1010 in the same case than FDS10x10 ? It would simplify greatly the integration into our systems with 2 pins rather than 2 cables. If no, do you have a suggestion for us. Thank you in advance, best regards
ksosnowski  (posted 2023-09-27 05:06:35.0)
Thanks for reaching out to Thorlabs. As these photodiodes are from different OEMs, we unfortunately are unable to offer this combination of package type of the FDG10X10 photodiode. We apologize for the inconvenience and I have reached out directly to discuss your application further detail.
Alastair Curnock  (posted 2023-09-18 15:43:59.613)
Do you have any Tolerance/uncertainty data on the responsivity of the FD10D Photodiode. ie from the typical curve, ±X% for any given Photodiode. I notice you provide some response variation data for the FDS1010 photodiode. Do you have anything similar for an InGaAs photodiode (preferably the FD10D) Many Thanks
ksosnowski  (posted 2023-09-27 05:59:29.0)
Thanks for reaching out to Thorlabs. While we do not have an exact tolerance for the responsivity, typical variations between lots can be up to +/-10%. Devices from a single batch may have less variance though we do not typically track these photodiodes in such a serial manner. We do offer a few of our photodiodes with serial calibrations like FDS1010-CAL however the only calibrated InGaAs diode we offer is the FGA21-CAL. The calibrated photodiodes ship with an individual spectral calibration report. I have reached out directly to discuss your application in further detail.
Georgi Ynkov  (posted 2022-09-15 11:32:35.93)
Hello, Can you give me the spectral responsivity of the (DSD2 - Dual Band Si/InGaAs Detector). Best Regards George
isaac lawrence  (posted 2022-08-23 05:45:17.503)
I found that the FDS010 is ESD Sensitive Device. I want to know the amount of its sensitivity to ESD. is there any way to measure its sensitivity to ESD?
ksosnowski  (posted 2022-08-26 03:09:16.0)
Hello Isaac, thanks for reaching out to Thorlabs. The FDS010 has a max reverse bias voltage limit of 25V, and we do not have an exact forward voltage limit but would expect in to be in the neighborhood of 1V or possibly less. These photodiodes damage easily when forward biased, and typically ESD events are on the ns timescale and kV range of electric potential so will easily damage in either polarity. We recommend wearing ESD protection whenever handling these units due to this.
Tony Mu  (posted 2022-08-11 23:34:00.08)
hi, Can you suggest what is the rated maximum peak power of this detector (FDS-100)?
ksosnowski  (posted 2022-08-17 10:22:36.0)
Thanks for reaching out to Thorlabs. For the FDS100, we expect optical saturation to occur before surface damage. The leads on the detector tend to be a limiting factor in the amount of generated photocurrent the device can handle. We recommend to keep below 5mA photocurrent to avoid thermal effects leading to wire bond failure. The input light level at which this occurs will depend on the diode's responsivity at your wavelength. I have contacted you directly to discuss your application further.
Pierantonio Brea  (posted 2022-02-25 06:29:32.96)
is it possible to obtain info about Cj capacitance vs Bias voltage of this Photodiode Thnaks in advance Pierantonio
ksosnowski  (posted 2022-02-25 06:57:13.0)
Thanks for reaching out to us, you can view the FSD100 Capacitance vs Bias Voltage by clicking on the blue "i" icons below each diode's picture. We have the Capacitance, Dark current, and Responsivity plots, as well as download links to the excel table for each plot.
Aditya Choudhary  (posted 2021-12-27 01:43:42.65)
Hii can you please tell me the max incident power for FDS100?
cdolbashian  (posted 2021-12-29 01:28:06.0)
Thank you for reaching out to us regarding this inquiry. The max current output, to avoid damaging the diode, would be ~5mA. By using this as a max current, we can use the relationship of Responsivity = Amps/Watt to identify the max power which would be associated with the max current of 5mA. The responsivity can be found on the specsheet of the diode itself.
Imke Timmermans  (posted 2021-07-13 02:10:06.797)
In your information I miss the field of view. It would be nice to know this for the photodiodes.
cdolbashian  (posted 2021-07-20 01:26:46.0)
Thank you for reaching out to us at Thorlabs! These diodes have different packages, different transparent windows, diode-package spacings, and geometries, so the FoV will vary from part to part. I have reached out to you directly to discuss the specific diode in which you were inquiring.
Denis Tihon  (posted 2021-05-21 11:04:47.487)
Is the FGA01FC photodetector working when connected to an FC/APC connector? I would like to connect it directly to a TW1064R5A1A coupler.
cdolbashian  (posted 2021-06-04 11:45:59.0)
Thank you for reaching out to us with your inquiry! The FGA01FC has been confirmed to have similar performance with an FC/APC patch cable. The observed difference, when compared to an FC/PC connector, was less than 1 dB.
Michael Linde Jakobsen  (posted 2021-05-20 03:59:42.613)
Very sorry to hear that you are terminating this product.
YLohia  (posted 2021-05-20 10:22:43.0)
Hello, thank you for your feedback. We will consider offering an alternative to this photodiode in the future.
Bo Tian  (posted 2021-04-23 11:41:33.917)
What is the substitute of FGAP71? Please quote me 50 pcs.
YLohia  (posted 2021-04-23 02:05:00.0)
Thank you for contacting Thorlabs. There are 3 alternatives-- SM05PD7A, PDA25K2, and DET25K2. These all contain the same FGAP71 photodiode.
Malcolm Higman  (posted 2021-01-18 10:11:54.67)
Your data-sheet has no dimensions on the pin positions which appear to be non-standard. Do you have a drawing with the pin positions with dimensions? Thanks. Malcolm
asundararaj  (posted 2021-01-26 03:28:06.0)
Thank you for contacting Thorlabs. While the FDGA05 does not have a standard pin configuration, the Solidworks file can be used to find the pin spacing. I have contacted you directly about this.
Ben Garber  (posted 2020-05-27 17:20:24.69)
I was wondering what the window thickness is on the FDS015 (for lens matching--I'm considering the N414TM-B or C392TME-B).
YLohia  (posted 2020-05-28 04:29:17.0)
Thank you for contacting Thorlabs. The window thickness for this photodiode is ~0.21 mm.
user  (posted 2020-04-23 11:46:32.8)
You should offer the extended range InGaAs detectors in a premounted configuration.
asundararaj  (posted 2020-04-23 02:06:42.0)
Thank you for your valuable feedback. I have posted in our internal engineering forum about extending the line of photodiodes we offer as mounted photodiodes for future consideration.
Haixuan Lin  (posted 2020-02-14 10:35:12.473)
Please help to check the angle dependence of FDS1010. If the diode emitting a cone up to 20deg in the fast axis, will it affect the responsivity of FDS1010?
asundararaj  (posted 2020-02-17 10:01:36.0)
Than you for contacting Thorlabs. When using a photodiode to detect a diverging beam, the detection would depend on the amount of light hitting the photodiode as well as the spatial uniformity of the diode. You can find the Spatial Uniformity of this and other diodes in the Lab Fact linked below. In addition, the FDS1010 has a broadband AR Coating on the active area. From this coating, there are some losses at higher angles of incidence due to Fresnel reflections. I will contact you via email about the angular dependence of the measured signal. Lab Fact -
Ben Garber  (posted 2019-11-19 15:06:07.05)
Dear Thorlabs, Looking at the specs for the FDS02, it's unclear whether the responsivity is with respect to the power in the fiber or incident power. Is the responsivity defined with respect to the power in the fiber? If not, what is the coupling efficiency?
asundararaj  (posted 2019-11-21 08:58:37.0)
Thank you for contacting Thorlabs. The responsivity is given in terms of the power incident on the photodetector. We typically expect a coupling loss of 10% and can vary marginally based on alignment.
anais leproux  (posted 2019-11-14 11:17:19.773)
Hello, I could not find the value of the shunt resistance of the photodiodes FDS100 and FD11A. Would it be possible to have them please? Thank you, Anais Leproux
YLohia  (posted 2019-11-20 04:26:06.0)
Hello Anais, thank you for contacting Thorlabs. The shunt resistances are 1 G Ohm (FDS100) and 5-100 G Ohm (FD11A) at room temperature. Please note that this parameter is not screened for individual units and can vary significantly.
Scott Hunter  (posted 2019-11-12 13:07:10.057)
Hello, I am considering this product in my design. Can you please let me know where I can get more detailed information on this product such as performance specifications with 0V bias? Thank you!
YLohia  (posted 2019-11-12 02:34:33.0)
Hello, thank you for contacting Thorlabs. The Dark Current and Capacitance values are given at various bias levels, and can be accessed by clicking on the blue "info" icon in the specs table.
dayana A  (posted 2019-10-24 19:25:00.727)
Please share the Maximum Forward Current of FGA01FC
YLohia  (posted 2019-10-24 10:44:04.0)
The maximum forward current of the FGA01FC is 5 mA.
Tariq Shamim Khwaja  (posted 2019-10-08 13:55:26.557)
What is the maximum input power density (damage threshold) for Ge-photodiodes? FDG10X10
asundararaj  (posted 2019-10-09 10:43:06.0)
Thank you for contacting Thorlabs. We do not have estimate on the damage threshold for the photodiodes. We typically recommend keeping the output current to be <10mA to avoid the internal wire in the FDG10x10 from failing. You can estimate the output current for your input power and wavelength from the responsivity graph on the 2nd page of the spec sheet at
user  (posted 2019-08-02 09:08:10.89)
What is the series resistance of the photodidoe FDS015 and FDS025? The reason behind this is the impedance matching between the output impedance of the photodiode and the input impedance of a transimpedance amplifier.
YLohia  (posted 2019-08-16 02:34:12.0)
Hello, thank you for contacting Thorlabs. The series resistance for both of these is on the order of 50 - 100 Ohm typically.
Andrey Kuznetsov  (posted 2019-07-13 17:22:48.15)
Some of these photodiodes look like a Hamamatsu product, Hamamatsu distinguishes some products as Si Photodiode and others as Si PIN Photodiode. Hamamatsu's offerings for InGaAs is exclusively for InGaAs PIN Photodiodes. Thorlabs does not distinguish photodiodes as whether they are PN or PIN. Can you explain what the effect on the specifications will be if a PIN photodiode is used in a zero bias photovoltaic mode? None of Thorlab's InGaAs are listed as PIN, and I was unable to find any vendor that sells a non-PINed InGaAs photodiode, so Thorlabs must be selling PINed photodiodes. Shouldn't PINed photodiodes be biased for they to work as specified, or will they still work fine like a regular photodiode, just slower rise/fall time and lower dark current than listed? What about saturation limit?
asundararaj  (posted 2019-07-19 04:57:52.0)
Without a bias voltage, the photodiode will have a much larger capacitance which leads to slower rise/fall time. Dark current spec however will not be listed under a Photovoltaic mode, because by definition of dark current, it requires a bias voltage (hence, this is sometimes specified under a very small voltage, e.g.10mV). The NEP in the photovoltaic mode would normally only accounts the noise from the shunt resistance. So it will be different as well. Our NEP spec accounts both of the Johnson noise from the shunt resistance and the shot noise from the dark current. As for the saturation power, it would decrease at 0 V Bias. ( Other parameters that we do not specify can also change with and without a Bias Voltage. For instance, adding a Bias Voltage would theoritically improve linearity. Another parameter that would change is the responsivity at various wavelengths. The amount of variance would vary from diode to diode. The InGaAs detectors that we carry are all PIN diodes. Some of our Si diodes are also PIN diodes. At higher wavelengths, the penetration depth is much larger so adding the intrinsic layer to the diode improves the diodes performance. However, in that case these photocurrents would be from diffusion and hence, its speed is much slower.
user  (posted 2019-05-21 09:07:54.173)
Hi, I would like to use FDS100 Photo diode for Data communication application. I would like to know the Pixel Size and format of FDS 100. Please share the same at the earliest possible. Regards
YLohia  (posted 2019-05-21 08:44:32.0)
Hello, the FDS100 is a silicon photodiode (not a CCD/CMOS camera), and thus, does not have a pixel size or format. That being said, it has an active area of 3.6 mm x 3.6 mm. If you are interested in cameras, please see our selection here :
user  (posted 2018-10-28 13:49:13.483)
Sorry,the last question I asked was sensitivity map, not responsivity plots, I still cannot find out what is the sensitivity range(in dBm).
YLohia  (posted 2018-12-27 03:59:01.0)
Hello, thank you for the clarification. This information can be found in our "Lab Facts" tab above, under "Photodiode Spatial Uniformity".
user  (posted 2018-10-25 22:01:07.26)
Hello! I want to know what is the sensitivity map of this photodiode?or what factor can take place of sensitivity?
YLohia  (posted 2018-10-26 08:57:44.0)
The responsivity plots can be found on the spec sheet or by clicking the blue "info" icon on the table.
dylan  (posted 2018-09-05 14:10:05.543)
Hi, is the pinout diagram for FGA01 viewed from the bottom? The pinout for FGA01FC explicitly states the view is from the bottom, and I believe the photodiodes are identical, but I need confirmation that this is the case. Kindest regards,
nbayconich  (posted 2018-09-06 03:12:42.0)
Thank you for contacting Thorlabs. Yes that is correct, both of these photodiodes have identical pin configurations. Our pin configurations will typically show a bottom view of the photodiode housing.
donyakhaledyan  (posted 2018-07-16 03:49:37.237)
hello I have a question and the answer of my question is so necessary so thank you so much if you help me. for these detectorsfds10x10&fds1010)What is the proper interface?
YLohia  (posted 2018-07-23 04:44:41.0)
Hello, thank you for contacting Thorlabs. I'm not sure I understand what you mean by "what is the proper interface?". Are you asking if these detectors are fiber coupled? If you're asking about the packaging type (e.g., TO-5, etc.), unfortunately, the FDS10X10 and FDS1010 don't have a standard. I have reached out to you directly to discuss this further.
lebouquj  (posted 2018-04-19 16:33:12.957)
Hi, Do you sell the fiber bulkhead of FGA01FC alone (without the diode). I cannot find it in your website. Thanks, Jean-Baptiste
YLohia  (posted 2018-04-20 10:56:39.0)
Hello Jean-Baptiste, thank you for contacting Thorlabs. I will reach out to you directly to discuss the possibility of offering this.
user  (posted 2017-07-17 15:09:46.207)
I am seeing ~10x increase in responsivity for FDS010 with a reverse biased circuit like you have in your tutorial in Fig. 2. I am using 12VDC, with 1k resistor in filter, and 10k load resistor. Is this expected, or am I doing something wrong.
tfrisch  (posted 2017-08-09 05:35:48.0)
Hello, thank you for contacting Thorlabs. While I would not expect the responsivity to change with bias voltage, increasing the bias will increase the range over which the diode will have linear response between input power and output current before saturating. If you would like to discuss this application further, please reach out to us at
marty.lawson  (posted 2017-02-01 12:49:31.84)
How large of a fiber optic core can the the FDS02 photo-diode be used with before coupling efficiency drops?
tfrisch  (posted 2017-02-16 02:14:08.0)
Hello, thank you for contacting Thorlabs. While the active area is 250um in diameter, the largest fiber we have that is smaller than that would be a 200um core. The FDS02 does not include a ball lens between the fiber and the detector. I will reach out to you with more details.
faryads  (posted 2016-03-22 21:36:37.053)
Hi, is the FGA01FC a multi-quantum-well structure photodiode?
besembeson  (posted 2016-03-25 12:26:10.0)
Response from Bweh at Thorlabs USA: The FGA01FC is not a multi-quantum-well structure. This is simply a doped InGaAs material to create a P-N junction for charge transfer when illuminated by light of suitable wavelength. Quantum wells on the other hand are heterostructure made by joining materials, in layers at the atomic level, which typically leads to an emission.
akpabioubongabasi  (posted 2016-02-29 14:16:38.723)
Please I need a Photodector with wide sensing area, a wavelength of 650nm and which comes with an SMA Connector
besembeson  (posted 2016-03-09 12:16:53.0)
Response from Bweh at Thorlabs USA: The SM05PD1A (Large Area Mounted Silicon Photodiode, 350-1100 nm, Cathode Grounded) could be a suitable recommendation. Others can be found at the following link on our website:
user  (posted 2015-10-16 14:16:32.147)
What is the series and shunt resistance of FDS100?
besembeson  (posted 2015-10-27 04:54:33.0)
Response from Bweh at Thorlabs USA: We don't have the exact values from the manufacturer of the photodiode but the shunt resistance should be in the Giga Ohm range while the series resistance should be extremely low that it can be negligible.
ehrler  (posted 2015-09-24 03:41:03.583)
Do you offer calibration for the DSD2 photodiode? Thanks!
besembeson  (posted 2015-10-08 12:06:35.0)
Response from Bweh at Thorlabs USA: This is not possible for the DSD2. There is a limitation to the minimum detector size for us to do such calibration, which is 2mm minimum. The InGaAs sensor is only about 1.5mm.
jarkko.piirto  (posted 2015-03-24 10:27:03.187)
I would need a photodiode set up with specific mount (3pcs) for picosecond laser alignment. Focused spot size (1/e2) is <100µm. Succesfull guidance will mean purchase..
jlow  (posted 2015-03-24 04:42:43.0)
Response from Jeremy at Thorlabs: We will need more information on your application first. We will contact you directly about this.
aklossek  (posted 2014-05-09 07:48:19.477)
Dear ladies and gentlemen, I am looking for a Si photodiode for a stimulated raman microscope, where the modulation of a ps-laser beam must be detected. The diode has to work in MHz range, quite large active area and must be sensitive between 800 and 1000nm. Up to now I thought about the DET100A. But now I have doubts that it will saturate to fast. Can you suggest another diode, which saturates at high powers to detect the laser beam. Best regards André Klossek
jlow  (posted 2014-05-13 08:43:47.0)
Response from Jeremy at Thorlabs: I will contact you directly to get more information on your application and make a recommendation.
tanzwei  (posted 2013-05-05 06:39:49.27)
Could you like to tell me the damage threshold of FGA10 ?
jlow  (posted 2013-05-09 11:19:00.0)
Response from Jeremy at Thorlabs: I would recommend keeping the output current to be <10mA to avoid the internal wire in the FGA10 from failing. You can estimate the output current for your input power and wavelength from the responsivity graph on the 2nd page of the spec sheet at
jlow  (posted 2012-10-24 16:14:00.0)
Response from Jeremy at Thorlabs: There's a ball lens covering the chip and it is not AR coated.
t.schmoll  (posted 2012-10-18 13:30:14.92)
Is there a window or a ball lens covering the chip? Is the window or ball lens AR coated? If so, for which wavelength is it optimized? Thank you! Tilman
jlow  (posted 2012-09-05 09:15:00.0)
Response from Jeremy at Thorlabs: I will get in contact with you directly to discuss about your application.
kkkdane  (posted 2012-09-03 10:17:41.0)
Hi, I’m a researcher in South of Korea Recently, I am developed infrared moisture detector. And I used LED and PD that is your product. I have a question. What is the question PD, LD(laser diode) and LED that use infrared moisture detector or infrared moisture analyzer? Recently, What other companies use the LED, PD that used the water detector of Commercial products? And what is commercial product? And, If you will give a detailed information about the LED, PD. I appreciate your help.
jlow  (posted 2012-08-23 16:31:00.0)
Response from Jeremy at Thorlabs: The junction capacitance between 4V and 5V is pretty much flat. Unfortunately we do not have any data on the capacitance and fall time specs beyond 5V.
Mathias.Helsen  (posted 2012-08-22 06:14:07.0)
I would like to use this diode as a detector for microwave modulated light, but the fall time at 5V is too high. How much doe the capacitance and fall time change when the bias voltage is increased?
jlow  (posted 2012-08-17 11:16:00.0)
Response from Jeremy at Thorlabs: We are not able to disclose the thicknesses for the PIN layers.
cardoza.david  (posted 2012-08-17 09:50:00.0)
Is there a way to get find out the thickness of the p, i and n regions of the FDS010 diodes? Thank you.
jlow  (posted 2012-08-16 13:42:00.0)
Response from Jeremy at Thorlabs: I will get in contact with you directly for the Excel spreadsheet. Please note that the spectral responsivity of your photodiode can be quite different than what is shown online. One alternative to using the FDS100 is the FDS100-CAL ( which is the NIST calibrated version of the FDS100.
brian.cox  (posted 2012-08-16 12:13:51.0)
Is the raw spectral responsivity data for the FDS100 available in an Excel spreadsheet? I'd like to get a more exact A/W value for my specific wavelengths of interest. Thanks!
tcohen  (posted 2012-03-22 14:27:00.0)
Response from Tim at Thorlabs: Thank you for your feedback. If the window is removed the diode can be easily damaged and absorb water from the atmosphere. This will be detrimental to the performance of the FGA10. If the window is removed we recommend storing it in an N2 dry box.
frank  (posted 2012-03-22 13:31:41.0)
Can you tell me if the performance of the FGA10 will degrade if its window is removed?
bdada  (posted 2012-03-16 12:33:00.0)
Response from Buki at Thorlabs: Thank you for your suggestion. We will work on adding dark current vs bias voltage charts to our website.
user  (posted 2012-03-15 19:02:40.0)
Please consider adding a plot that shows the dark current as a function of bias voltage.
bdada  (posted 2012-01-31 23:43:00.0)
Response from Buki at Thorlabs: The temperature does have a slight effect on the responsivity, but mostly in near the bandgap region. We have sent you some typical curves to review.
ale.cere  (posted 2012-01-30 12:27:49.0)
I am currently working with a FDG05 and I notice that the efficiency changes with temperature, as indicated also in the datasheet. Is it available any data regarding the expected change in responsivity as funcion of temperature?
jjurado  (posted 2011-07-07 09:57:00.0)
Response from Javier at Thorlabs to jasiel.mora: Thank you very much for contacting us! We actually show a recommended circuit diagram for our photodiodes on their spec sheets. Take a look at the spec sheet for the FDG03 here: I will contact you directly in case you have any further questions.
jasiel.mora  (posted 2011-07-06 16:42:48.0)
Could you please sugest any connection diagram for the sensor FDG03? Thanks.
jjurado  (posted 2011-04-20 12:09:00.0)
Response from Javier at Thorlabs to last poster: Thank you very much for contacting us. The shunt resistance of the FDS1010 photodiode is in the range of 50-200 MOhm (@ 10 mV reverse bias). Also, we have added a graph of the maximum, average, and minimum responsivity values for the FDS1010 (See Responsivity Graphs tab). Please contact us at if you have any further questions or comments.
user  (posted 2011-04-20 13:08:43.0)
What is the shunt resistance of FDS1010? Its not in the specs. A typ. and min. responsivity value would be useful as well.
julien  (posted 2011-01-18 16:08:51.0)
A response from Julien at Thorlabs: The FGA04 can only be calibrated at a predefined fixed wavelength by using a fiber coupled laser source. A calibration over the whole wavelength range of this photodiode is unfortunately not possible due to its small active area. Such a calibration would be made in free space using a monochromator, whose output beam diameter is about 1.5mm. Such a beam would largely overfill the active sensor area, and thus make the calibration highly inaccurate. You can contact our tech support ( to further discuss which solutions could be adapted to your need
user  (posted 2011-01-18 17:46:35.0)
why a NIST-traceable calibration is not possible for FGA04? Im looking for a fiber-coupled detector that is provided with calibration.
kleap  (posted 2010-10-28 13:45:47.0)
Our FDG05 are failing roughly 3 months of use. What is the expected life of these detectors? We are exposing indirect UV light around 5W/cm2 of intensity to the LADs. Could this be of a concern?
Thorlabs  (posted 2010-10-28 15:01:31.0)
Response from Javier at Thorlabs to kleap: at 5 W/cm^2, the detector will most likely be saturated; however, we specify a damage threshold of 10 W/cm^2 for the FDG05, so I do not expect excessive power to be the reason for failure. Also, we do not have a lifetime spec, since there are too many factors involved. I will contact you directly to troubleshoot your application.
Thorlabs  (posted 2010-07-23 14:06:31.0)
Response from Javier at Thorlabs to ranutyagi: Thank you for your feedback. With an input of 10 mW, you will most likely end up damaging your photodiodes. As a guideline, we specify a maximum input power density of 100 mW/cm^2. So, for example, if we assume that you have a 10 mW, 2 mm diameter beam at the input, the resulting power density is ~333mW/cm^2, which clearly exceeds the damage threshold. For linear operation of the photodiode, we recommend limiting the input to ~ 1 mW. Above this value, the diode undergoes saturation and, eventually, damage.
ranutyagi  (posted 2010-07-23 07:03:58.0)
I am using FDS100 and FDS010 with CW 10mW peak power laser diode. will it be damaging my photodiode? How much is the maximum input power these diodes can sustain.
Adam  (posted 2010-04-29 16:58:35.0)
A response from Adam at Thorlabs to marcoc: Saturation occurs for these diodes at approximately 10mW. We would suggest using these diodes with peak and average powers that are less than 10mW if you want to avoid saturation.
marcoc  (posted 2010-04-29 16:51:34.0)
Any idea about the saturation for pulsed (50fs) laser beam at 800 nm ? thanks marco
apalmentieri  (posted 2010-01-14 15:34:33.0)
A response from Adam at Thorlabs to Curtis: The operating and storage temperature ranges for the FDS100 are the following: -25 to +85 deg C operating, -40 to +100 deg C storage.
curtis.m.ihlefeld  (posted 2010-01-14 15:12:09.0)
Dear Sirs, I have several FDS100 photodiodes and would like to know the allowable temperature ranges for operation and storage. Regards, Curtis Ihlefeld
danhickstein  (posted 2009-08-07 14:16:56.0)
Dear Thorlabs, It would be nice to have the wavelength response for the FDS02 plotted on the Graphs page. I found the graph on the spec sheet, but it would be nice to see it plotted on the same graph as the rest of the FDS series. Regards, Dan
Tyler  (posted 2009-02-02 09:25:34.0)
A response from Tyler at Thorlabs to ocarlsson: The FGA04 spec sheet available under the Drawings and Documents tab lists the max forward current as 10 mA and the damage threshold at 70 mW. The damage threshold is the point at which the photodiode sensor will fail, however, internal wires in the FGA04 package will fail when the forward current exceeds 10 mA. Use the responsivity curve in the spec sheet to approximate the forward current for a given wavelength or contact our technical support department for assistance. An optical fiber attenuator like the FA05T, FA10T, FA15T, or FA25T can be used in to reduce the power in the optical fiber to a level that is safe to use with the FGA04. Thank you for your question, I will be adding a note to the bottom of the table on the Specs tab to help future customers with this issue.
ocarlsson  (posted 2009-01-16 02:31:20.0)
The FGA04 max current is 10mA and damage threshold is 100mW. Responsivity 0.8. How is the damage threshold calculated? Best regards Olle

The following table lists Thorlabs' selection of photodiodes, photoconductive, and pyroelectric detectors. Item numbers in the same row contain the same detector element.

Photodetector Cross Reference
Wavelength Material Unmounted
Amplified Detector,
OEM Package
200 - 1100 nm Si FDS010 SM05PD2A
Si - SM1PD2A - - -
240 - 1170 nm B-Si - - DET20X2 - -
320 - 1000 nm Si - - - PDA8A2 -
320 - 1100 nm Si FD11A SM05PD3A - PDF10A2 -
Si - a - DET100A2 a PDA100A2 a PDAPC2 a
340 - 1100 nm Si FDS10X10 - - - -
350 - 1100 nm Si FDS100
FDS100-CAL b
Si FDS1010
FDS1010-CAL b
- - -
400 - 1000 nm Si - - - PDA015A2
400 - 1100 nm Si FDS015 c - - - -
Si FDS025 c
FDS02 d
- DET02AFC(/M)
- -
400 - 1700 nm Si & InGaAs DSD2 - - - -
500 - 1700 nm InGaAs - - DET10N2 - -
0.6 - 16 µm LiTaO3 - - - PDA13L2e -
750 - 1650 nm InGaAs - - - PDA8GS -
800 - 1700 nm InGaAs FGA015 - - PDA015C2 -
InGaAs FGA21
InGaAs FGA01 c
- DET01CFC(/M) - -
InGaAs FDGA05 c - - PDA05CF2 PDAPC6
InGaAs - - DET08CFC(/M)
- -
InGaAs - - - PDF10C2 -
800 - 1800 nm Ge FDG03
SM05PD6A DET30B2 PDA30B2 -
Ge FDG05 - - - -
900 - 1700 nm InGaAs FGA10 SM05PD4A DET10C2 PDA10CS2 -
900 - 2600 nm InGaAs FD05D - DET05D2 - -
950 - 1650 nm InGaAs - - - FPD310-FC-NIR
1.0 - 5.8 µm InAsSb - - - PDA10PT(-EC) -
2.0 - 8.0 µm HgCdTe (MCT) VML8T0
VML8T4 f
- - PDAVJ8 -
2.0 - 10.6 µm HgCdTe (MCT) VML10T0
VML10T4 f
- - PDAVJ10 -
2.7 - 5.0 µm HgCdTe (MCT) VL5T0 - - PDAVJ5 -
2.7 - 5.3 µm InAsSb - - - PDA07P2 PDAPC9
  • If you are interested in purchasing the bare photodiode incorporated in these detectors without the printed circuit board, please contact Tech Support.
  • Calibrated Unmounted Photodiode
  • Unmounted TO-46 Can Photodiode
  • Unmounted TO-46 Can Photodiode with FC/PC Bulkhead
  • Pyroelectric Detector
  • Photovoltaic Detector with Thermoelectric Cooler
Back to Top

Si Photodiodes - VIS Wavelengths

Click Image
for Details
FDS010 FDS010 FDS10X10 FDS100 FDS1010 FDS1010 FDS02 FDS025
Item # FDS010 FD11A FDS10X10 FDS100 FDS1010 FDS015 FDS02 FDS025
Key Feature High Speed, UV Grade Fused Silica Window to Provide Sensitivity Down to 200 nm Lowest Dark Current in TO-18 Can with a Window Low Dark Current in 10 mm x 10 mm Ceramic Package High Speed, Largest Sensor in a TO-5 Can High Speed, Large Active Area and Mounted on an Insulating Ceramic Substrate Highest Speed and Lowest Capacitance in a TO-46 Can with an AR-Coated Window High Speed and Low Capacitance in a Direct Fiber-Coupled FC/PC Package High Speed and Low Capacitance in a TO-46 Can with a Ball Lens
Info info info info info info info info info
Wavelength Range 200 - 1100 nma 320 - 1100 nm 340 - 1100 nm 350 - 1100 nm 350 - 1100 nm 400 - 1100 nm 400 - 1100 nm 400 - 1100 nm
Active Area 0.8 mm2
(Ø1.0 mm)
1.21 mm2
(1.1 mm x 1.1 mm)
100 mm2
(10 mm x 10 mm)
13 mm2
(3.6 mm x 3.6 mm)
100 mm2
(10 mm x 10 mm)
0.018 mm2
(Ø150 µm)
0.049 mm2
(Ø0.25 mm)
0.049 mm2
(Ø0.25 mm)
Rise/Fall Timeb 1 ns / 1 ns
@ 830 nm, 10 V
400 nsc,d
@ 650 nm, 0 V
150 ns / 150 nsd
@ 5 V
10 ns / 10 nsd
@ 632 nm, 20 V
65 ns / 65 nsd
@ 632 nm, 5 V
35 ps / 200 ps
@ 850 nm, 5 V
47 ps / 246 ps
@ 850 nm, 5 V
47 ps / 246 ps
@ 850 nm, 5 V 
NEP (W/Hz1/2) 5.0 x 10-14
@ 830 nm, 10 V
6.8 x 10-16
@ 960 nm, 0 V
1.50 x 10-14
@ 960 nm
1.2 x 10-14
@ 900 nm, 20 V
2.07 x 10-13
@ 970 nm, 5 V
8.60 x 10-15
@ 850 nm, 5 V
9.29 x 10-15
@ 850 nm, 5 V
9.29 x 10-15
@ 850 nm, 5 V
Dark Current 0.3 nA (Typ.)
@ 10 V
2.0 pA (Max)
@ 10 mV
200 pA @ 5 V 1.0 nA (Typ.)
@ 20 V
600 nA (Max)
@ 5 V
0.03 nA (Typ.)
@ 5 V
35 pA (Typ.)
@ 5 V
35 pA (Typ.)
@ 5 V
6 pF (Typ.) @ 10 V 140 pF (Typ.)
@ 0 V
380 pF @ 5 V 24 pF (Typ.)
@ 20 V
375 pF (Typ.)
@ 5 V
0.65 pF (Typ.)
@ 5 V
0.94 pF (Typ.)
@ 5 V
0.94 pF (Typ.)
@ 5 V
Package TO-5 TO-18 Ceramic TO-5 Ceramic TO-46 TO-46, FC/PC Bulkhead TO-46
Not Available STO5S
Not Available STO46S
- - - 5 Pack (-P5)
10 Pack (-P10)
50 Pack (-P50)
- - - -
  • When long-term UV light is applied, the product specifications may degrade. For example, the product’s UV response may decrease and the dark current may increase. The degree to which the specifications may degrade is based upon factors such as the irradiation level, intensity, and usage time.
  • Typical Values; RL = 50 Ω Unless Otherwise Specified
  • Measured with a 1 kΩ Resistor
  • The photodiode will be slower at NIR wavelengths.
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
FDS010 Support Documentation
FDS010Si Photodiode, 1 ns Rise Time, 200 - 1100 nm, Ø1 mm Active Area
FD11A Support Documentation
FD11ASi Photodiode, 400 ns Rise Time, 320 - 1100 nm, 1.1 mm x 1.1 mm Active Area
FDS10X10 Support Documentation
FDS10X10Si Photodiode, 150 ns Rise Time, 340 - 1100 nm, 10 mm x 10 mm Active Area
FDS100 Support Documentation
FDS100Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area
FDS100-P5 Support Documentation
FDS100-P5Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area, 5 Pack
FDS100-P10 Support Documentation
FDS100-P10Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area, 10 Pack
FDS100-P50 Support Documentation
FDS100-P50Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area, 50 Pack
FDS1010 Support Documentation
FDS1010Si Photodiode, 65 ns Rise Time, 350 - 1100 nm, 10 mm x 10 mm Active Area
FDS015 Support Documentation
FDS015Si Photodiode, 35 ps Rise Time, 400 - 1100 nm, Ø150 µm Active Area
FDS02 Support Documentation
FDS02Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area, FC/PC Bulkhead
FDS025 Support Documentation
FDS025Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area
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InGaAs Photodiodes - NIR Wavelengths

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for Details
Item # FGA01 FGA01FC FGA015 FDGA05 FGA21 FGA10 FD05D FD10D
Key Feature High Speed and Low Capacitance in a TO-46 Can with a Ball Lens High Speed and Low Capacitance in a Direct Fiber-Coupled FC/PC Package High Speed and Low Capacitance High Speed, High Responsivity, and Low Capacitance Large Active Area and High Speed High Speed and Low Dark Current Long Wavelength Range Long Wavelength Range and Large Active Area
Info info info info info info info info info
Wavelength Range 800 - 1700 nm 800 - 1700 nm 800 - 1700 nm 800 - 1700 nm 800 - 1700 nm 900 - 1700 nm 900 - 2600 nm 900 - 2600 nm
Active Area 0.01 mm2
(Ø120 µm)
0.01 mm2
(Ø120 µm)
0.018 mm2
(Ø150 µm)
0.196 mm2
(Ø0.5 mm)
3.1 mm2 (Ø2 mm) 0.79 mm2 (Ø1 mm) 0.20 mm2
(Ø0.5 mm)
0.79 mm2
(Ø1.0 mm)
Rise/Fall Timea 300 ps / 300 ps
@ 5 V
300 ps / 300 ps
@ 5 V
300 ps / 300 ps
@ 1550 nm, 5 V
2.5 ns / 2.5 ns
@ 5 V
25 ns / 25 ns
@ 3 V
10 ns / 10 ns
@ 5 V
17 ns / 17 ns
@ 0 V
25 ns / 25 ns
@ 0 V
4.5 x 10-15
@ 1500 nm
4.5 x 10-15
@ 1500 nm
1.3 x 10-14
@ 1550 nm
2.0 x 10-14
@ 1550 nm
6.0 x 10-14
@ 1550 nm
2.5 x 10-14
@ 1550 nm, 5 V
5.0 x 10-13
@ 2300 nm
1.0 x 10-12
@ 2300 nm
Dark Current 0.05 nA (Typ.)
@ 5 V
0.05 nA (Typ.)
@ 5 V
0.5 nA (Typ.)
@ 5 V
6 nA (Typ.)
@ 5 V
50 nA (Typ.)
@ 1 V
1.1 nA (Typ.)
@ 5 V
1 µA (Typ.)
@ 0.5 V
3 µA (Typ.)
@ 0.5 V
2.0 pF (Typ.) @ 5 V 2.0 pF (Typ.) @ 5 V 1.5 pF (Typ.) @ 5 V 10 pF (Typ.) @ 5 V 100 pF (Typ.) @ 3 V 80 pF (Typ.) @ 5 V 140 pF (Typ.) @ 0 V 500 pF (Typ.) @ 0 V
Package TO-46 TO-46, FC/PC Bulkhead TO-18 TO-46 TO-5 TO-5 TO-18 TO-18
  • Typical Values; RL = 50 Ω Unless Otherwise Specified
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
FGA01 Support Documentation
FGA01InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area
FGA01FC Support Documentation
FGA01FCInGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area, FC/PC Bulkhead
FGA015 Support Documentation
FGA015InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø150 µm Active Area
FDGA05 Support Documentation
FDGA05InGaAs Photodiode, 2.5 ns Rise Time, 800-1700 nm, Ø0.5 mm Active Area
FGA21 Support Documentation
FGA21InGaAs Photodiode, 25 ns Rise Time, 800-1700 nm, Ø2 mm Active Area
FGA10 Support Documentation
FGA10InGaAs Photodiode, 10 ns Rise Time, 900-1700 nm, Ø1 mm Active Area
FD05D Support Documentation
FD05DInGaAs Photodiode, 17 ns Rise Time, 900-2600 nm, Ø0.5 mm Active Area
FD10D Support Documentation
FD10DInGaAs Photodiode, 25 ns Rise Time, 900-2600 nm, Ø1.0 mm Active Area
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Dual Band Si/InGaAs Photodiode

  • Dual Detector Chip Design - Si Over InGaAs - Provides Wide Detector Range
  • 4-Pin TO-5 Package
  • Large Active Area
Item # Info Wavelength
Package Rise/Fall
DSD2 info 400 - 1100 nm
1000 - 1800 nm
5.07 mm2
(Ø2.54 mm, Si)
1.77 mm2
(Ø1.50 mm, InGaAs)
TO-5 4.0 µs
(Both Layers)
@ 0 V
1.9 x 10-14
2.1 x 10-13
1 nA @ 1 V
0.5 nA @ 1 V
450 pF @ 0 V
300 pF @ 0 V
Not Available
  • Typical Values; RL = 50 Ω Unless Otherwise Specified
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
DSD2 Support Documentation
DSD2Dual Band Si/InGaAs Detector, 4 µs Rise Time, 400 - 1700 nm, Ø2.54/Ø1.5 mm
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Ge Photodiodes - NIR Wavelengths

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for Details
Item # FDG03 FDG05a FDG50 FDG10X10
Key Feature Large Active Area in a TO-5 Can High Speed on a Ceramic Substrate Large Active Area in a TO-8 Can Largest Active Area
Info info info info info
Wavelength Range 800 - 1800 nm 800 - 1800 nm 800 - 1800 nm 800 - 1800 nm
Active Area 7.1 mm2 (Ø3 mm) 19.6 mm2 (Ø5 mm) 19.6 mm2 (Ø5 mm) 100 mm2
(10 mm x 10 mm)
Rise/Fall Timeb 600 ns / 600 ns @ 3 V 220 ns / 220 ns @ 3 V 220 ns / 220 ns (Typ.) @ 10 V 10 μs (Typ.) @ 1 V
NEP 2.6 x 10-12 W/Hz1/2 @ 1550 nm 4.0 x 10-12 W/Hz1/2 @ 1550 nm 4.0 x 10-12 W/Hz1/2 @ 1550 nm 4.0 x 10-12 W/Hz1/2 @ 1550 nmc
Dark Current 4.0 µA (Max) @ 1 V 40 µA (Max) @ 3 V 60 µA (Max) @ 5 V 50 µA (Max) @ 0.3 V
Junction Capacitance  6 nF (Typ.) @ 1 V
4.5 nF (Typ.) @ 3 V
3000 pF (Typ.) @ 3 V 1800 pF (Max) @ 5 V
16000 pF (Max) @ 0 V
80 nF (Typ.) @ 1 V
135 nF (Typ.) @ 0 V
Shunt Resistance 25 kΩ (Min) - 4 kΩ (Typ.) 2 kΩ (Min)
Package TO-5 Ceramic TO-8 Ceramic
Not Available STO8S
Not Available
  • Please note that the wire leads on the FDG05 and FDG10X10 are attached to the sensor using a conductive epoxy, as soldering them on would damage the sensor. This results in a fragile bond. Care should be taken while handing this unit so that the wire leads are not broken.
  • Typical Values; RL = 50 Ω Unless Otherwise Specified
  • NEP is Specified for the Photovoltaic Mode
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
FDG03 Support Documentation
FDG03Ge Photodiode, 600 ns Rise Time, 800 - 1800 nm, Ø3 mm Active Area
FDG05 Support Documentation
FDG05Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
FDG50 Support Documentation
FDG50Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
FDG10X10 Support Documentation
FDG10X10Ge Photodiode, 10 μs Rise Time, 800 - 1800 nm, 10 mm x 10 mm Active Area