Features
- InP Gain Chip on Heatsink
- Broad Tuning Range and High Output Power
- Ultra-Low Angled Facet Reflectance
The SAF1145H Single Angled Facet (SAF) gain chip uses a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, the SAF1145H is superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser.
Specifications
- Operating Current (Typ/Max): 300 mA/500 mA
- Center Wavelength (Min/Typ/Max): 1190 nm/1220 nm/1250 nm
- ASE Power at IOP (Min/Typ): 1 mW/2.25 mW
- Peak Gain at IOP: 20 dB
- Optical Bandwidth (Min/Typ): 60 nm/80 nm
- Gain Ripple at IOP (Typ/Max): 0.25 dB/1 dB
- Forward Voltage (Typ/Max): 1.4V/1.8 V
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