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DET10C/M - InGaAs Detector, 700-1800 nm, 10 ns Rise Time, 0.8 mm2, Metric 
DET10C/M - InGaAs Detector, 700-1800 nm, 10 ns Rise Time, 0.8 mm<sup>2</sup>, Metric
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DET10C/M
InGaAs Detector, 700-1800 nm, 10 ns Rise Time, 0.8 mm2, Metric
Part Number: DET10C/M - Ask a technical question Ask a technical question.
Weight: 0.21 lbs / Each
Available / Ships: Today
RoHS: RoHS Compliant
Price: $276.70
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DET10C/M Support Documentation
 
Manual: Operating Manual
Catalog Page:
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Product Summary:
Features
  • Rise Times as Fast as 1 ns
  • Thin Profile Allows Measurements in Tight Spaces
  • Easy-To-Use, Compact, and Versatile
  • SM05 and SM1 Threads Ideal for Fiber Coupling or Mounting ND Filters
  • Internal A23 Bias Battery (Included)

The DET10C/M InGaAs photodetector provides improved bandwidth and NEP performance over previous models. The slim housing allows the optical detector to slip into tight setups. This model comes complete with a fast PIN photodiode and an internal bias battery packaged in a rugged aluminum housing. With a wide bandwidth DC-coupled output, this detector is ideal for monitoring fast pulsed lasers as well as DC optical sources. The DET has a Bias-T circuit that combines a high-frequency AC signal with a DC signal into a single output. The direct photodiode anode current is provided on a side panel BNC. This output is easily converted to a positive voltage using a terminating resistor. When looking at high-speed signals, Thorlabs recommends using a 50 Ohm load resistance. For lower bandwidth applications, our variable terminator is a great time saver.

All connections and controls have been moved away from the light path, thus making the DET a more useful, easier-to-use device. The SM1, SM05, and 8-32 (M4) threadings on the DET detector housing allow it to be mounted in a cage system, lens tube system, or on a TR series post. The DET10C/M arrives with a 12 VDC Bias battery already installed.

Specifications
  • Active Area: Ø1.0 mm
  • Wavelength Range: 700 – 1800 nm
  • Rise Time: 10 ns
  • NEP (W/Hz1/2): 1.6 x 10-12
  • Dark Current: 1 nA (25 nA Max)
  • Junction Capacitance: 40 pF (Max)

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