Booster Optical Amplifiers (BOAs) are single-pass, traveling-wave amplifiers that perform well with both monochromatic and multi-wavelength signals. Since BOAs only amplify one state of polarization, they are best suited for applications where the input polarization of the light is known. The BOA consists of a highly efficient GaAs/InGaAs Quantum Well (QW) layer structure, designed for amplifying polarized optical signals in the 1050 nm band and is also an ideal gain medium for implementing wide-bandwidth tunable lasers.
Item #
Center Wavelength
3 dB Bandwidth
Saturated Output Power (@ -3 dB)
Signal Gain (@ Pin = -20 dBm)
Noise Figure
BOA1137S and BOA1137P
1050 nm Typical
50 nm Typical
9 dBm Typical
21 dB Typical
11 dB Typical
For a full specification list, please see the Specs and Performance Plots tabs above.
As seen in the schematic to the right, the input and output of the amplifier is coupled to the reliable ridge waveguide on the optical amplifier chip. The device is contained in a standard 14-pin butterfly package, with single mode fiber pigtails terminated with FC/APC connectors. The BOA1137P utilizes polarization-maintaining PM980 fiber, while the BOA1137S uses non-polarization-maintaining HI1060 fiber. An integrated thermistor allows these BOAs to be temperature controlled, thus stabilizing the gain and the spectrum.
Driver Option The CLD1015 butterfly LD/TEC controller is one possible controller for these amplifiers. The LD/TEC controller and mount combination offers full control via a touch screen.
Operating Specificationsa
Item #
BOA1137S and BOA1137P
Min
Typ
Max
Operating Current
IOP
300 mA
Center Wavelength
λC
1030 nm
1050 nm
1070 nm
Optical 3 dB Bandwidth
BW
40 nm
50 nm
Saturation Output Powerb,c (@ -3 dB)
PSAT
6 dBm
9 dBm
Small Signal Gain @ Pin = -20 dBmb,c
G
17 dB
21 dB
Gain Ripple (rms) @ IOP
δG
0.5 dB
Noise Figure
NF
11 dB
14 dB
Forward Voltage
VF
1.8 V
2.5 V
Chip Length
1.5 mm
Waveguide Refractive Index
3.3
TEC Operation (typ/max @ TCASE = 25/70 °C)
- TEC Current
ITEC
0.25 A
1.5 A
- TEC Voltage
VTEC
0.35 V
4.0 V
- Thermistor Resistance
RTH
10 kΩ
a These Operating Specifications are a consistent set of values, which will yield the specified performance. Please note that exceeding the Absolute Maximum Ratings below may cause device failure. b IOP = 300 mA c λ = 1054.7 nm
Absolute Maximum Ratings*
Item #
BOA1137S and BOA1137P
Min
Max
Operating Current
IOP
360 mA
Optical Output Power, CW
POut
15 mW
Chip Temperature (TEC)
TChip
10°C
30°C
Case Temperature
TCase
0°C
70°C
*Exceeding these Absolute Maximum Ratings may cause permanent damage to the device. Operation at or above these values is not advised.
Semiconductor Optical Amplifiers (SOAs and BOAs) are similar in design to Fabry-Perot Laser Diodes. The difference being that Fabry-Perot laser diodes have reflective coatings on both end faces of the semiconductor chip. The optical feedback from the end faces establishes a cavity in which lasing can occur. SOAs and BOAs have an anti-reflection (AR) coating on both end faces of the semiconductor chip. The AR coatings limit the optical feedback into the chip so that lasing does not occur.
As is typical for all amplifiers, SOA/BOAs operate in two regimes: a linear, flat, constant gain regime and a non-linear, saturated output regime. When used to amplify a modulated signal, the linear regime is typically used to eliminate pattern-dependent distortion, multi-channel cross-talk and transient response issues common to EDFAs. The non-linear regime is used to take advantage of the highly non-linear attributes of the semiconductor gain medium (cross-gain modulation, cross phase modulation) to perform wavelength conversion, optical 3R regeneration, header recognition, and other high-speed optical signal processing functions.
For a CW input signal, the amount of power that can be produced by the amplifier is determined by the saturation output power (Psat) parameter. Psat is defined as the output power at which the small-signal gain has been compressed by 3 dB. The maximum amount of CW power that can be extracted is approximately 3 dB higher than the saturation power.
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