SAF Gain Chips, λc = 1220 nm
| Parameter | Min | Typ | Max |
|---|
| Operating Current | | 300 mA | 500 mA | | Center Wavelength | 1190 nm | 1220 nm | 1250 nm | | ASE Power @ IOP | 1 mW | 1.25 mW | | | Peak Gain @ IOP | | 20 dB | | | Optical Bandwidth | 60 nm | 80 nm | | Gain Ripple (rms) @ IOP
Res. BW = 0.1 nm | | 0.35 dB | 1 dB | | Angled Facet Reflectivity | | 0.005% | 0.01% | | Normal Facet Reflectivity | | 10% | | | Forward Voltage | | 1.4 V | 1.8 V | | Chip Length | | 1.0 mm | | | Waveguide Refractive Index | | 3.2 | | | Lateral Beam Exit Angle | | 26.5° | | Transverse Beam
Divergence (FWHM) | 20° | 30° | 40° | Lateral Beam
Divergence (FWHM) | 10° | 20° | 30° |
Features- Broad Tuning Range
- High Output Power
- Ultra-Low Angled Facet Reflectance: 0.005% (Typ)
- Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
- Gain Medium for Widely Tunable External Cavity Semiconductor Lasers
Single Angled Facet (SAF) gain chips use a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, SAF gain chips are superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser. Sample Results of an SAF1145 Used in a Basic Littman-Metcalf Configuration
For more information on using a SAF gain chip in an external cavity laser see the online External Cavity Diode Laser Tutorial.
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SAF Gain Chips,