Other SAF Gain Chips
1320 or 1550 nm Chip in Half Butterfly
1220 nm Chip on Submount or Heatsink
1320 nm Chip on Submount or Heatsink
1450 nm Chip on Submount or Heatsink
1650 nm Chip on Submount or Heatsink

Features

Broad Tuning Range
High Output Power
Ultra-Low Angled Facet Reflectance: 0.005% (Typ)
Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
Gain Medium for Widely Tunable External Cavity Semiconductor Lasers

Single Angled Facet (SAF) gain chips use a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, SAF gain chips are superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser.

SAF1126C C-Band SAF Reflective Amplifier

Parameter*	Min	Typ	Max
Operating Current		300 mA	350 mA
Operating Wavelength Range	1528 nm		1568 nm
Threshold Current		60 mA	75 mA
Output Power over Band	40 mW	60 mW
Side-Mode Suppression Ratio		50 dB
Angled Facet Reflectivity		0.005%	0.01%
Normal Facet Reflectivity		10%
Forward Voltage		1.3 V	1.8 V
Chip Length		1.0 mm
Waveguide Refractive Index		3.2
Lateral Beam Exit Angle		19.5^o
Transverse Beam Divergence (FWHM)	26^o	30^o	34^o
Lateral Beam Divergence (FWHM)		16^o

*Specifications based on a Littrow external cavity configuration, external cavity losses that are <5 dB CW, and a chip temperature of 25 ^oC.

SAF1118C L-Band SAF Reflective Amplifier

Parameter	Min	Typ	Max
Operating Current		300 mA	350 mA
Operating Wavelength Range	1568 nm		1608 nm
Threshold Current		60 mA	75 mA
Output Power over Band	40 mW	60 mW
Side-Mode Suppression Ratio		50 dB
Angled Facet Reflectivity		0.005%	0.01%
Normal Facet Reflectivity		10%
Forward Voltage		1.3 V	1.8 V
Chip Length		1.0 mm
Waveguide Refractive Index		3.2
Lateral Beam Exit Angle		19.5^o
Transverse Beam Divergence (FWHM)	26^o	30^o	34^o
Lateral Beam Divergence (FWHM)		16^o

*Specifications based on a Litrow external cavity configuration, external cavity losses that are <5 dB CW, and a chip temperature of 25 ^oC.

SAF1126 Performance

SAF1126C Power and Voltage Performance

SAF1118 Performance

SAF1118 and SAF1126 ASE Performance

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C- and L-Band Single Angled Facet Gain Chips

Features

SAF1126C C-Band SAF Reflective Amplifier

SAF1118C L-Band SAF Reflective Amplifier

SAF1126 Performance

SAF1118 Performance