Recommended Controller/Mount Options

Item #	Mount	Diode Driver	TEC Controller
LDC1300B	Butterfly	√	√
CLD1015	Butterfly	√	√
LM14S2	Butterfly
ITC4000 Series	-	√	√
LDC200 Series	-	√
TED200C	-		√

Features

Center Wavelength at 1050, 1280, 1310, or 1550 nm
Typical Bandwidths Ranging from 40 to 110 nm
Butterfly or DIL Package
Pigtailed with 1.5 m of SM or PM Fiber
FC/APC Connector
Integrated TEC and Thermistor

Superluminescent Diodes (SLDs) are excellent high-power, broadband light sources that are ideal for use in applications such as Optical Coherence Tomography (OCT) Imaging Systems and Fiber Optic Gyroscopes (FOG). The Dual In-Line- (DIL) and Butterfly-packaged SLDs offered here are Indium Phosphide (InP) devices manufactured by Thorlabs' Quantum Electronics (TQE).

Each device has an integrated thermoelectric cooler (TEC) and thermistor to ensure output stability. The output is coupled into an SM or PM fiber terminated with an FC/APC connector. The SLDs in DIL packages have integrated photodiodes for monitoring the device output. We also offer some of these SLDs in our XL line. These SLDs, denoted with the suffix XL, are hand-picked parts that demonstrate highly desirable specifications such as increased bandwidth and power. The specifications tables below and the tabs above further detail the differences.

1050 nm Superluminescent Diodes

Item #	SLD1050x
Parameter	Min	Typ.	Max
Operating Current	-	-	300 mA
Center Wavelength	1030 nm	1050 nm	1070 nm
ASE Power*	6 mW	8 mW	-
Optical 3 dB Bandwidth*	40 nm	50 nm	-
RMS Gain Ripple^*	-	0.1 dB	0.25 dB
Forward Voltage*	-	2.0 V	2.5 V
Photodiode Sensitivity	-	-	-
TEC Operation: typ / max @ T_CASE = 25 °C / 65 °C
TEC Current	-	0.25 A	1.5 A
TEC Voltage	-	0.30 V	4.0 V
Thermistor Resistance	-	10 kΩ	-

*@I_OP = 300 mA

1280 nm Superluminescent Diodes

Item #	SLD1123S			SLD1023S			SLD1029S
Parameter	Min	Typ.	Max	Min	Typ.	Max	Min	Typ.	Max
Operating Current	-	500 mA	600 mA	-	600 mA	800 mA	-	500 mA	650 mA
Center Wavelength	1260 nm	1280 nm	1310 nm	1270 nm	1280 nm	1290 nm	1260 nm	1280 nm	1300 nm
ASE Power	1 mW	1.5 mW	-	10 mW	15 mW	-	10 mW	15 mW	-
Optical Bandwidth	75 nm	95 nm	-	40 nm	45 nm	-	35 nm	40 nm	-
RMS Gain Ripple^a	-	-	0.25 dB	-	-	0.35 dB	-	-	.35 dB
Forward Voltage^b	-	1.6 V	2.0 V	-	1.4 V	2.0 V	-	1.3 V	2.0 V
Photodiode Sensitivity^c	0.05 A/W	0.1 A/W	0.8 A/W	NA			0.05 A/W	0.1 A/W	0.8 A/W
TEC Operation: typ / max @ T_CASE = 25 °C / 65 °C
TEC Current	-	0.35 A	1.5 A	-	0.3 A	1.5 A	-	0.3 A	1.5 A
TEC Voltage	-	0.6 V	3.5 V	-	0.6 V	3.5 V	-	0.6 V	3.5 V
Thermistor Resistance	-	10 kΩ	-	-	10 kΩ	-	-	10 kΩ	-

^a@I_OP, Res. BW = 0.1 nm, ^b@ I_OP, ^c @V_PD = -5 V

1310 nm Superluminescent Diodes

Item #	SLD1021S
Parameter	Min	Typ.	Max
Operating Current	-	700 mA	900 mA
Center Wavelength	1290 nm	-	1330 nm
ASE Power	10 mW	12.5 mW	-
Optical Bandwidth	80 nm	85 nm	-
RMS Gain Ripple^a	-	0.1 dB	0.35 dB
Forward Voltage^b	-	1.55 V	2.0 V
Photodiode Sensitivity^c	NA
TEC Operation: typ / max @ T_CASE = 25 °C / 65 °C
TEC Current	-	0.4 A	1.5 A
TEC Voltage	-	0.5 V	4 V
Thermistor Resistance	-	10 kΩ	-

Item #	SLD1018x			SLD1018xXL			SLD1024S
Parameter	Min	Typ.	Max	Min	Typ.	Max	Min	Typ.	Max
Operating Current	-	600 mA	800 mA	-	600 mA	800 mA	-	500 mA	650 mA
Center Wavelength	1290 nm	-	1330 nm	1290 nm	-	1330 nm	1290 nm	1310 nm	1330 nm
ASE Power	22 mW	30 mW	-	30 mW	-	-	15 mW	22 mW	-
Optical Bandwidth	40 nm	45 nm	-	45 nm	-	-	35 nm	40 nm	-
RMS Gain Ripple^a	-	0.1 dB	0.35 dB	-	0.1 dB	0.35 dB	-	0.08 dB	0.2 dB
Forward Voltage^b	-	1.5 V	1.8 V	-	1.5 V	1.8 V	-	1.4 V	1.6 V
Photodiode Sensitivity^c	NA			NA			0.05	0.1 A/W	0.8 A/W
TEC Operation: typ / max @ T_CASE = 25 °C / 65 °C
TEC Current	-	0.3 A	1.5 A	-	0.3 A	1.5 A	-	0.35 A	1.5 A
TEC Voltage	-	0.5 V	4 V	-	0.5 V	4 V	-	0.65 V	3.5 V
Thermistor Resistance	-	10 kΩ	-	-	10 kΩ	-	-	10 kΩ	-

^a @I_OP, Res. BW = 0.1 nm, ^b @ I_OP, ^c @V_PD = -5 V

1550 nm Superluminescent Diodes

Item #	SLD1550x-A2			SLD1550x-A1			SLD1550x-A40
Parameter	Min	Typ.	Max	Min	Typ.	Max	Min	Typ.	Max
Operating Current	-	550 mA	600 mA	-	450 mA	500 mA	-	750 mA	900 mA
Center Wavelength	1520 nm	1550 nm	1580 nm	1520 nm	1550 nm	1580 nm	1530 nm	1550 nm	1570 nm
ASE Power	2.0 mW	2.5 mW	-	0.75 mW	1.0 mW	-	35 mW	40 mW	-
Optical Bandwidth	85 nm	90 nm	-	100 nm	110 nm	-	30 nm	33 nm	-
RMS Gain Ripple^a	-	-	0.25 dB	-	-	0.1 dB	-	0.2 dB	0.35 dB
Forward Voltage^b	-	1.6 V	2.0 V	-	1.6 V	2.0 V	-	1.4 V	1.8 V
TEC Operation: typ / max @ T_CASE = 25 °C / 65 °C
TEC Current	-	0.3 A	1.5 A	-	0.3 A	1.5 A	-	0.3 A	1.5 A
TEC Voltage	-	0.3 V	3.5 V	-	0.3 V	3.5 V	-	0.3 V	3.5 V
Thermistor Resistance	-	10 kΩ	-	-	10 kΩ	-	-	10 kΩ	-

Item #	SLD1128S			SLD1030S
Parameter	Min	Typ.	Max	Min	Typ.	Max
Operating Current	-	400 mA	500 mA	-	500 mA	650 mA
Center Wavelength	1520 nm	1550 nm	1580 nm	1530 nm	1550 nm	1570 nm
ASE Power	0.75 mW	1.0 mW	-	13 mW	16 mW	-
Optical Bandwidth	100 nm	110 nm	-	40 nm	45 nm	-
RMS Gain Ripple^a	-	-	0.1 dB	-	0.2 dB	0.30 dB
Forward Voltage^b	-	1.6 V	2.0 V	-	1.3 V	1.6 V
Photodiode Sensitivity^c	0.05 A/W	0.1 A/W	0.8 A/W	0.05 A/W	0.1 A/W	0.8 A/W
TEC Operation: typ / max @ T_CASE = 25 °C / 65 °C
TEC Current	-	0.35 A	1.5 A	-	0.3 A	1.5 A
TEC Voltage	-	0.5 V	3.5 V	-	0.6 V	3.5 V
Thermistor Resistance	-	10 kΩ	-	-	10 kΩ	-

Item #	SLD1005S			SLD1005SXL
Parameter	Min	Typ.	Max	Min	Typ.	Max
Operating Current	-	600 mA	800 mA	-	600 mA	800 mA
Center Wavelength	1530 nm	1550 nm	1570 nm	1535 nm	1550 nm	1565 nm
ASE Power	20 mW	22 mW	-	22 mW	-	-
Optical Bandwidth	45 nm	50 nm	-	55 nm	-	-
RMS Gain Ripple^a	-	0.2 dB	0.35 dB	-	0.2 dB	0.35 dB
Forward Voltage^b	-	1.4 V	1.6 V	-	1.4 V	1.6 V
TEC Operation: typ / max @ T_CASE = 25 °C / 65 °C
TEC Current	-	0.3 A	1.5 A	-	0.3 A	1.5 A
TEC Voltage	-	0.3 V	3.5 V	-	0.3 V	3.5 V
Thermistor Resistance	-	10 kΩ	-	-	10 kΩ	-

^a @I_OP, Res. BW = 0.1 nm, ^b @ I_OP, ^c @V_PD = -5 V

Superluminescent Diode Performance:

Item #	Center Wavelength	Output Power	FWHM
SLD1050S	1050 nm	8 mW	50 nm
SLD1050P	1050 nm	8 mW	50 nm
SLD1123S	1280 nm	1.5 mW	95 nm
SLD1023S	1280 nm	15 mW	45 nm
SLD1029S	1280 nm	15 mW	40 nm
SLD1021S	1310 nm	12.5 mW	85 nm
SLD1018x	1310 nm	30 mW	45 nm
SLD1018xXL	1310 nm	30 mW	45 nm (Min)
SLD1024S	1310 nm	22 mW	40 nm
SLD1550x-A1	1550 nm	1.0 mW	110 nm
SLD1128S	1550 nm	1.0 mW	110 nm
SLD1550x-A2	1550 nm	2.0 mW	90 nm
SLD1030S	1550 nm	16 mW	45 nm
SLD1005S	1550 nm	22 mW	50 nm
SLD1005SXL	1550 nm	22 mW (Min)	55 nm (Min)
SLD1550x-A40	1550 nm	40 mW	33 nm

*Basic laser diode operating characteristics can be measured by increasing current (I) while measuring the device voltage (V) and light output (L). The resulting data is usually referred to as an LIV curve.

Butterfly Package

Pin	Description	Pin	Description
1	+ TEC	14	- TEC
2	Thermistor	13	Case
3	NC	12	NC
4	NC	11	SLD Cathode
5	Thermistor	10	SLD Anode
6	NC	9	NC
7	NC	8	NC

DIL Package

Pin	Description	Pin	Description
1	+ TEC	14	- TEC
2	NC	13	Case
3	NC	12	Thermistor
4	NC	11	Thermistor
5	SLD Anode	10	NC
6	NC	9	SLD Cathode
7	PD Cathode	8	PD Anode

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Posted Comments:

Poster: bdada

Posted Date: 2012-04-25 10:50:00.0

Response from Buki at Thorlabs to alexandru.serb05: Thank you for your feedback. Gain ripple is not intensity noise. It is due to interference between two SLD facets such that, on its spectrum, you will see variation of the amplitude of the spectrum density vs. wavelength. SLD noise only depends its bandwidth and in principle, it is frequency independent. We have done some studies on that and I have contacted you with the results.

Poster: alexandru.serb05

Posted Date: 2012-04-24 05:00:41.0

Hallo, I just need to ask a couple of questions: 1) Could you please explain to me the concept of gain ripple? Is it variations in average output intensity: a) between different LEDs? b) between different frequency bins within the same LED? c) at each frequency bin over time within the same LED? d) Something completely different? 2) Is there a way I can see some noise plots for all these products? It would be particularly useful if I had access to such data and comparable data relating to the pigtailed laser diode range of products you offer. Noise vs frequency as measured by the same photodetector capturing the entire outgoing beam at a specificed power output is the sort of plot I have in my mind, but anything that yields meaningful comparative noise data will do. Note: both laser and non-laser diode may be assumed to be driven by a controller + TEC, but without feedback stabilisation if such data is available. Introducing feedback brings along a whole array of other parameters and will only make comparisons more difficult... Thanks.

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