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Thorlabs stocks a wide selection of discrete photodiodes and calibrated photodiodes. These include indium gallium arsenide (InGaAs), gallium phosphide (GaP), silicon (Si), and germanium (Ge) photodiodes. We also offer some specialized photodiodes such as the DSD2 Dual-Band photodiodes that offer both a Si and InGaAs PDs in one package supporting a combined wavelength range of 400 to 1700 nm. The FGA20 is an InGaAs PD with high responsivity from 1200 to 2600 nm, allowing detection of wavelengths beyond the normal 1800 nm range of typical InGaAs photodiodes. We also offer the FGAP71, a gallium phosphide (GaP) photodiode, having the shortest wavelength range, 150 to 550 nm, of our offered PDs.

To complement our PD offerings, we have a range of mounts and accessories that are designed to be used with PDs.

Specification Table

Item #
WL
Range
(nm)		Active
Area		Diode
Package
Typeb		Rise/(Fall)
Timea		NEP
(W/Hz1/2)		Typical
Dark
Current		Junction
Capac-
itancea		Oper/
Store
Temp
(°C)
Indium Gallium Arsenide (InGaAs)
FGA04c800 - 18000.008 mm2
(Ø0.1 mm)		TO-46
FC/PC Conctr		100 ps (100 ps)
@ 5 V		1.5 x 10-15
@ 1550 nm		0.5 nA
@ 5 V		1.0 pF @ 5 V-40 to 85/
-40 to 125
FGA10700 - 18000.81 mm2
(Ø1 mm)		TO-5/PIN10 ns (10 ns)
@ 5 V		2.5 x 10-14
@ 900 nm		100 nA
@ 5 V (max)		80 pF @ 0 V-40 to 75/
-55 to 125
FGA201200 - 26000.79 mm2
(Ø1 mm)		TO-18/PIN23 ns (23 ns)
@ 1 V		2.0 x 10-1275 μA
@ 1 V (max)		200 pF @ 1 V40 to 85/
-55 to 125
FGA21800 - 18003.14 mm2
(Ø2 mm)		TO-5/PIN66 ns (66 ns)
@ 0 V		3.0 x 10-14
@ 2300 nm		200 nA
@ 1 V		500 pF @ 0 V -40 to 85/
-40 to 125
Silicon (Si)
FDS02400 - 11000.25 mm2TO-46
FC/PC Conctr		47 ps (246 ps)
@ -5 V		9.3 x 10-1535 pAd
@ 5 V		0.94 pF
@ 5 V		-40 to 75/
-55 to 125
FDS010200 - 11000.81 mm2
(Ø1 mm)		TO-5/PIN<1 ns (<1 ns)
@ 20 V		5.0 x 10-14
@ 900 nm		2.5 nA10 pF
@ 0 V		-40 to 100/
-55 to 125
FDS100350 - 110013 mm2
(3.6 x 3.6 mm)		TO-5/PIN10 ns (10 ns)
@ 20 V		1.2 x 10-14
@ 900 nm		20 nA20 pF
@ 1V		-40 to 100/
-55 to 125
FDS1010400 - 1100100 mm2
(9.7 x 9.7 mm)		Ceramic
Wafer		45 ns (45 ns)
@ 5 V		5.5 x 10-13
@ 900 nm		0.6 μA
@ 5V		375 pF
@ 5V		-10 to 60/
-20 to 70
Germanium (Ge)
FDG03800 - 18007.1 mm2
(Ø3 mm)		TO-5/PIN500 ns (500 ns)
@ 3 V		1.0 x 10-12
@ 1550 nm		4.0 μA
@ 1 V 		4 nF
@ 1V		-55 to 60/
-55 to 60
FDG05800 - 180019.6 mm2
(Ø5 mm)		Ceramic
Substrate		220 ns
@ 3 V		4.0 x 10-12
@ 1550 nm		40 μA
@ 3 V 		3000 pF
@ 5V		-55 to 60/
-55 to 60
FDG1010800 - 1800100 mm2
(10 x 10 mm)		Ceramic
Substrate		3.5 μs
@ 1 V		4.0 x 10-12
@ 1550 nm		50 μA (max.)
@ 0.5 V		30 nF
@ 0.5V		-55 to 60/
-55 to 60
Gallium Phosphate (GaP)
FGAP71150 - 5504.8 mm2
(2.5 x 2.5 mm)		TO-5/PIN1 ns (140 ns)
@ 5 V		1.0 x 10-14
@ 440 nm		10 nA (max.)
@ 5 V		--40 to 125/
-40 to 125
Dual-Diode, Silicone - Indium Gallium Arsenide (InGaAs)
DSD2400 - 1100
1000 - 1700		Ø2.54 mm
Ø1.5 mm		TO-5/PIN4 μs typical
(both layers)		1.9 x 10-14
2.1 x 10-13		-450 pF
300 pF		-40 to 100/
-55 to 125

a) Typical values. RL=50Ω
b) See specification sheet for exact pin out configuration
c) The damage threshold for the sensor itself is 70 mW CW; however, the wires internal to the package (not the lead wires) will melt causing the device to fail when the photocurrent exceeds 10 mA. When using the FGA04 in higher power applications in the region where the sensor has a high responsivity consider using an optical fiber attenuator.
d) 500 pA Max

The response of a photodiode to increases (decreases) in the intensity of the incident light is not linear all the way up to the damage threshold. For higher power applications, consider using a neutral density filter to reduce the intensity of the incident light or measure the beam directly with an optical power meter.

FGA Series Photodiode Responsivity Graph

 

FDS Series Photodiode Responsivity Graph
FDG Photodiode Responsivity GraphFGAP Photodiode Responsivity Graph

DSD2 Photodiode Responsivity Graph
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Posted Comments:
Poster: Thorlabs Posted Date: 2010-07-23 14:06:31.0
Response from Javier at Thorlabs to ranutyagi: Thank you for your feedback. With an input of 10 mW, you will most likely end up damaging your photodiodes. As a guideline, we specify a maximum input power density of 100 mW/cm^2. So, for example, if we assume that you have a 10 mW, 2 mm diameter beam at the input, the resulting power density is ~333mW/cm^2, which clearly exceeds the damage threshold. For linear operation of the photodiode, we recommend limiting the input to ~ 1 mW. Above this value, the diode undergoes saturation and, eventually, damage.
Poster: ranutyagi Posted Date: 2010-07-23 07:03:58.0
I am using FDS100 and FDS010 with CW 10mW peak power laser diode. will it be damaging my photodiode? How much is the maximum input power these diodes can sustain.
Poster: Adam Posted Date: 2010-04-29 16:58:35.0
A response from Adam at Thorlabs to marcoc: Saturation occurs for these diodes at approximately 10mW. We would suggest using these diodes with peak and average powers that are less than 10mW if you want to avoid saturation.
Poster: marcoc Posted Date: 2010-04-29 16:51:34.0
Any idea about the saturation for pulsed (50fs) laser beam at 800 nm ? thanks marco
Poster: apalmentieri Posted Date: 2010-01-14 15:34:33.0
A response from Adam at Thorlabs to Curtis: The operating and storage temperature ranges for the FDS100 are the following: -25 to +85 deg C operating, -40 to +100 deg C storage.
Poster: curtis.m.ihlefeld Posted Date: 2010-01-14 15:12:09.0
Dear Sirs, I have several FDS100 photodiodes and would like to know the allowable temperature ranges for operation and storage. Regards, Curtis Ihlefeld
Poster: danhickstein Posted Date: 2009-08-07 14:16:56.0
Dear Thorlabs, It would be nice to have the wavelength response for the FDS02 plotted on the Graphs page. I found the graph on the spec sheet, but it would be nice to see it plotted on the same graph as the rest of the FDS series. Regards, Dan
Poster: test Posted Date: 2009-07-28 14:56:39.0
Test
Poster: test Posted Date: 2009-07-28 14:55:33.0
Test
Poster: Tyler Posted Date: 2009-02-02 09:25:34.0
A response from Tyler at Thorlabs to ocarlsson: The FGA04 spec sheet available under the Drawings and Documents tab lists the max forward current as 10 mA and the damage threshold at 70 mW. The damage threshold is the point at which the photodiode sensor will fail, however, internal wires in the FGA04 package will fail when the forward current exceeds 10 mA. Use the responsivity curve in the spec sheet to approximate the forward current for a given wavelength or contact our technical support department for assistance. An optical fiber attenuator like the FA05T, FA10T, FA15T, or FA25T can be used in to reduce the power in the optical fiber to a level that is safe to use with the FGA04. Thank you for your question, I will be adding a note to the bottom of the table on the Specs tab to help future customers with this issue.
Poster: ocarlsson Posted Date: 2009-01-16 02:31:20.0
The FGA04 max current is 10mA and damage threshold is 100mW. Responsivity 0.8. How is the damage threshold calculated? Best regards Olle
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InGaAs Photodiodes - NIR to IR Wavelengths
The FGA04 Features a Direct Fiber Coupled FC/PC Package and High Speed
The FGA10 Features High Speed and Large Active Area
The FGA20 Features a Long Wavelength Range
The FGA21 Features the Largest Active Area of the Series
To complement our PD offerings, we have a range of mounts and accessories that are designed to be used with PDs.
FGA Series Photodiode Responsivity Graph
Item # Wavelength
Range
(nm)		 Active
Area		 Diode
Package
Typeb		 Rise/(Fall)
Timea		 NEP
(W/Hz1/2)		 Typical
Dark
Current		 Junction
Capacitancea
FGA04c 800 - 1800 0.008 mm2
(Ø0.1 mm)		 TO-46 w/
FC/PC Connector		 100 ps (100 ps)
@ 5 V		 1.5 x 10-15
@ 1550 nm		 0.5 nA
@ 5 V		 1.0 pF @ 5 V
FGA10 700 - 1800 0.81 mm2
(Ø1 mm)		 TO-5/PIN 10 ns (10 ns)
@ 5 V		 2.5 x 10-14
@ 900 nm		 100 nA
@ 5 V (max)		 80 pF @ 0 V
FGA20 1200 - 2600 0.79 mm2
(Ø1 mm)		 TO-18/PIN 23 ns (23 ns)
@ 1 V		 2.0 x 10-12 75 µA
@ 1 V (max)		 200 pF @ 1 V
FGA21 800 - 1800 3.14 mm2
(Ø2 mm)		 TO-5/PIN 66 ns (66 ns)
@ 0 V		 3.0 x 10-14
@ 2300 nm		 200 nA
@ 1 V		 500 pF @ 0 V
a) Typical values. RL = 50 Ohm
b) See specification sheet for exact pin out configuration
c) The damage threshold for the sensor itself is 70 mW CW; however, the wires internal to the package (not the lead wires) will melt causing the device to fail when the photocurrent exceeds 10 mA. When using the FGA04 in higher power applications in the region where the sensor has a high responsivity consider using an optical fiber attenuator.

Order
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  +1 QTY Part Number - Imperial Price Available/Ships
FGA04 Support Documentation FGA04 - InGaAs Photodiode, 100 ps Rise Time, 800 - 1800 nm, FC/PC Coupled $140.00
Today
 
FGA10 Support Documentation FGA10 - InGaAs Photodiode, 5 ns Rise Time, 700-1800 nm, Ø1 mm Active Area $158.10
Today
 
FGA20 Support Documentation FGA20 - InGaAs Photodiode, 15 MHz Bandwidth, 1200-2600 nm, Ø1 mm Active Area $242.40
Today
 
FGA21 Support Documentation FGA21 - InGaAs Photodiode, 66 ns Rise Time, 800 - 1800 nm, Ø2 mm Active Area $192.00
Today
 

Si Photodiodes - VIS Wavelengths
The FDS02 Features a Direct Fiber Coupled FC/PC Package and High Speed
The FDS010 Features a UV Grade Fused Silica Window to Provide Sensitivity Down to 200 nm
The FDS100 Features the Largest Sensor in a TO-5 Can
The FDS1010 Features the Largest Active Area of the Series Mounted on an Insulating Ceramic Substrate
FDS Series Photodiode Responsivity Graph
Item # Wavelength
Range
(nm)		 Active
Area		 Diode
Package
Typeb		 Rise/(Fall)
Timea		 NEP
(W/Hz1/2)		 Typical
Dark
Current		 Junction
Capacitancea
FDS02  400 - 1100 0.25 mm TO-46
FC/PC Connector		 47 ps (246 ps)
@ -5 V		 9.3 x 10-15 35 pAd
@ 5 V		 0.94 pF
@ 5 V
FDS010 200 - 1100 0.81 mm2
(Ø1 mm)		 TO-5/PIN <1 ns (<1 ns)
@ 20 V		 5.0 x 10-14
@ 900 nm		 2.5 nA 10 pF
@ 0 V
FDS100 350 - 1100 13 mm2
(3.6 mm x 3.6 mm)		 TO-5/PIN 10 ns (10 ns)
@ 20 V		 1.2 x 10-14
@ 900 nm		 20 nA 20 pF
@ 1V
FDS1010 400 - 1100 100 mm2
(9.7 mm x 9.7 mm)		 Ceramic Wafer 45 ns (45 ns)
@ 5 V		 5.5 x 10-13
@ 900 nm		 0.6 µA
@ 5V		 375 pF
@ 5V
a) Typical values. RL = 50 Ohm
b) See specification sheet for exact pin out configuration		 d) 500 pA Max

Order
Based on your currency / country selection, your order will ship from Newton, New Jersey  
  +1 QTY Part Number - Imperial Price Available/Ships
FDS02 Support Documentation FDS02 - Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area $73.50
Today
 
FDS010 Support Documentation FDS010 - Si Photodiode, 1 ns Rise Time, 200 - 1100 nm, Ø1 mm Active Area $42.10
Today
 
FDS100 Support Documentation FDS100 - Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area $13.10
Today
 
FDS1010 Support Documentation FDS1010 - Si Photodiode, 40 ns Rise Time, 400 - 1100 nm, 10 mm x 10 mm Active Area $43.80
  Lead Time
 

Ge Photodiodes - NIR Wavelengths
The FDG03 Features a Large Active Area in a TO-5 Can
The FDG05 Features High Speed on a Ceramic Substrate
The FDG1010 Features the Largest Area on a Ceramic Substrate

Please note that the wire leads on the FDG05 and FDG1010 are attached to the sensor using a conductive epoxy as soldering them on would damage the sensor. This results in a fragile bond. Follow the included handling instructions to maintain the integrity of the bonding.

 FDG Series Photodiode Responsivity Graph
Item # Wavelength
Range
(nm)		 Active
Area		 Diode
Package
Typeb		 Rise/(Fall)
Timea		 NEP
(W/Hz1/2)		 Typical
Dark
Current		 Junction
Capacitancea
FDG03 800 - 1800 7.1 mm2
(Ø3 mm)		 TO-5/PIN 500 ns (500 ns)
@ 3 V		 1.0 x 10-12
@ 1550 nm		 4.0 µA
@ 1 V 		4 nF
@ 1 V
FDG05 800 - 1800 19.6 mm2
(Ø5 mm)		 Ceramic Substrate 220 ns
@ 3 V		 4.0 x 10-12
@ 1550 nm		 40 µA
@ 3 V 		3 nF
@ 5 V
FDG1010 800 - 1800 100 mm2
(10 mm x 10 mm)		 Ceramic Substrate 3.5 µs
@ 1 V		 4.0 x 10-12
@ 1550 nm		 50 µA (max.)
@ 0.5 V		 30 nF
@ 0.5 V
a) Typical values. RL = 50 Ohm b) See specification sheet for exact pin out configuration

Order
Based on your currency / country selection, your order will ship from Newton, New Jersey  
  +1 QTY Part Number - Imperial Price Available/Ships
FDG03 Support Documentation FDG03 - Ge Photodiode, 500 ns Rise Time, 800 - 1800 nm, Ø3 mm Active Area $96.50
Today
 
FDG05 Support Documentation FDG05 - Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, 5 mm x 5 mm Active Area $232.40
Today
 
FDG1010 Support Documentation FDG1010 - Ge Photodiode, 3.5 µs Rise Time, 800 - 1800 nm, 10 mm x 10 mm Active Area $405.30
Today
 

GaP Photodiodes - UV Wavelengths
Extremely Short Wavelength Range (150 -550 nm)
Fast Rise Time
Mounted in a Hermetically Sealed Package with a Sapphire Window
FGAP Photodiode Responsivity Graph
Item # Wavelength
Range
(nm)		 Active
Area		 Diode
Package
Typeb		 Rise/(Fall)
Timea		 NEP
(W/Hz1/2)		 Typical
Dark
Current		 Junction
Capacitancea
FGAP71 150 - 550 4.8 mm2
(2.5 mm x 2.5 mm)		 - 1 ns (140 ns)
@ 5 V		 1.0 x 10-14
@ 440 nm		 10 nA (Max)
@ 5 V		 -
a) Typical values. RL = 50 Ohm b) See specification sheet for exact pin out configuration

Order
Based on your currency / country selection, your order will ship from Newton, New Jersey  
  +1 QTY Part Number - Imperial Price Available/Ships
FGAP71 Support Documentation FGAP71 - GaP Photodiode, 1 ns Rise Time, 150-550 nm, 4.8 mm2 Active Area $85.90
Today
 

Dual Band Detectors
Two Detector Chip Design - SI Over InGaAs - Provides Wide Detector Range
4-Pin TO-5 Package
Large Active Area
DSD2 Photodiode Responsivity Graph
Item # Wavelength
Range
(nm)		 Active
Area		 Diode
Package
Typeb		 Rise/(Fall)
Timea		 NEP
(W/Hz1/2)		 Typical
Dark
Current		 Junction
Capacitancea
DSD2 400 - 1100
1000 - 1700		 Ø2.54 mm
Ø1.5 mm		 TO-5/PIN 4 µs Typical
(both layers)		 1.9 x 10-14
2.1 x 10-13		 - 450 pF
300 pF
a) Typical values. RL = 50 Ohm b) See specification sheet for exact pin out configuration

Order
Based on your currency / country selection, your order will ship from Newton, New Jersey  
  +1 QTY Part Number - Imperial Price Available/Ships
DSD2 Support Documentation DSD2 - Dual Band Si/InGaAs Detector, 4 µs Rise Time, 400 - 1700 nm, Ø2.54/Ø1.5 mm $414.10
Today
 

Author: lmorgus Last Updated: May 20, 2009
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